Light extraction enhancement of SOI-based erbium/oxygen Co-implanted photonic crystal microcavities

H_5 photonic crystal(PC) microcavities co-implanted with erbium(Er) and oxygen(O) ions were fabricated on silicon-on-insulator(SOI) wafers.Photoluminescence(PL) measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identic...

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Published inJournal of semiconductors Vol. 32; no. 9; pp. 43 - 45
Main Author 张家顺 王玥 吴远大 张晓光 姜婷 安俊明 李建光 王红杰 胡雄伟
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2011
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ISSN1674-4926
DOI10.1088/1674-4926/32/9/094004

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Summary:H_5 photonic crystal(PC) microcavities co-implanted with erbium(Er) and oxygen(O) ions were fabricated on silicon-on-insulator(SOI) wafers.Photoluminescence(PL) measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.
Bibliography:H_5 photonic crystal(PC) microcavities co-implanted with erbium(Er) and oxygen(O) ions were fabricated on silicon-on-insulator(SOI) wafers.Photoluminescence(PL) measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.
11-5781/TN
light extraction; erbium/oxygen co-implantation; photonic crystal microcavity; SOI; photoluminescence
Zhang Jiashun,Wang Yue,Wu Yuanda~+,Zhang Xiaoguang, Jiang Ting,An Junming,Li Jianguang,Wang Hongjie, and Hu Xiongwei State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China
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ISSN:1674-4926
DOI:10.1088/1674-4926/32/9/094004