Light extraction enhancement of SOI-based erbium/oxygen Co-implanted photonic crystal microcavities
H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identic...
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| Published in | Journal of semiconductors Vol. 32; no. 9; pp. 43 - 45 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.09.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/32/9/094004 |
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| Abstract | H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation. |
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| AbstractList | H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation. H sub(5) photonic crystal (PC) microcavities co-implanted with erbium (Er) and oxygen (O) ions were fabricated on silicon-on-insulator (SOI) wafers. Photoluminescence (PL) measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54 mu m, as compared to an identically implanted unpatterned SOI wafer. In addition, we also explored the adjustment of cavity modes by changing the structural parameters of the PC, and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased, which is consistent with the theoretical simulation. |
| Author | 张家顺 王玥 吴远大 张晓光 姜婷 安俊明 李建光 王红杰 胡雄伟 |
| AuthorAffiliation | State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Cites_doi | 10.1088/0022-3727/41/13/135101 10.1016/j.optmat.2004.08.061 10.1063/1.2916711 10.1364/OE.18.002601 10.1038/nature02063 10.1103/PhysRevB.39.10825 10.1109/50.802999 10.1063/1.1614832 |
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| DocumentTitleAlternate | Light extraction enhancement of SOI-based erbium/oxygen Co-implanted photonic crystal microcavities |
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| Notes | H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation. 11-5781/TN light extraction; erbium/oxygen co-implantation; photonic crystal microcavity; SOI; photoluminescence Zhang Jiashun,Wang Yue,Wu Yuanda~＋,Zhang Xiaoguang, Jiang Ting,An Junming,Li Jianguang,Wang Hongjie, and Hu Xiongwei State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | 1 Makarova M (3) 2009 4 5 6 Kwon S H (9) 2004; 87-C 7 8 Ding W C (2) 2008; 41 10 |
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| Snippet | H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI）... H sub(5) photonic crystal (PC) microcavities co-implanted with erbium (Er) and oxygen (O) ions were fabricated on silicon-on-insulator (SOI) wafers.... |
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| SubjectTerms | Erbium Extraction Holes Microcavities Photonic crystals Polycarbonates Semiconductors SOI晶圆 Wafers 光子晶体 光提取效率 微腔 植入 氧 绝缘体上硅 铒 |
| Title | Light extraction enhancement of SOI-based erbium/oxygen Co-implanted photonic crystal microcavities |
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