Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates

• Published in: Chinese physics letters Vol. 27; no. 1; pp. 218 - 220
• Main Author: 赵子文 胡礼中 张贺秋 孙景昌 边继明 孙开通 陈希 赵涧泽 李雪 朱锦霞
• Format: Journal Article
• Language: English
• Published: IOP Publishing 2010
• Subjects: Antimony; Deposition; Halls; Pulsed laser deposition; Sapphire; Spectral emissivity; Thin films; Zinc oxide; 光致发光光谱; 氧化锌薄膜; 脉冲激光沉积法; 蓝宝石衬底; 衬底温度; 锑掺杂; 霍尔迁移率
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/27/1/017301

Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.