Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates
Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivit...
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| Published in | Chinese physics letters Vol. 27; no. 1; pp. 218 - 220 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
2010
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/27/1/017301 |
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| Abstract | Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission. |
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| AbstractList | Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550 degree C exhibits p-type conductivity. It gives a resistivity of 15.25 Delta *W . cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290 X 1017 cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450--650 degree C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550 degree C shows the strong acceptor-bound exciton (A0X) emission. Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission. |
| Author | 赵子文 胡礼中 张贺秋 孙景昌 边继明 孙开通 陈希 赵涧泽 李雪 朱锦霞 |
| AuthorAffiliation | School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 The Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024 |
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| CitedBy_id | crossref_primary_10_1002_pssa_201026626 crossref_primary_10_1016_j_cap_2010_02_028 crossref_primary_10_5897_IJPS2018_4731 crossref_primary_10_32571_ijct_704871 |
| Cites_doi | 10.1016/j.apsusc.2008.06.005 10.1088/0256-307X/25/12/045 10.1103/PhysRevB.70.195207 10.1103/PhysRevLett.92.155504 10.1063/1.2089183 10.1016/S0927-0248(01)00104-0 10.1088/0256-307X/26/5/057305 10.1023/A:1008925315123 10.1063/1.2194870 10.1016/S0921-5107(00)00604-8 10.1063/1.368595 |
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| DocumentTitleAlternate | Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates |
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| Snippet | Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped... |
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| SubjectTerms | Antimony Deposition Halls Pulsed laser deposition Sapphire Spectral emissivity Thin films Zinc oxide 光致发光光谱 氧化锌薄膜 脉冲激光沉积法 蓝宝石衬底 衬底温度 锑掺杂 霍尔迁移率 |
| Title | Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates |
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