DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ¯ ) metalorganic vapor phase epitaxy
The carbon incorporation mechanism in GaN(0001) and GaN(000 1 ¯ ) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the la...
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| Published in | Applied physics letters Vol. 111; no. 14 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
02.10.2017
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| ISSN | 0003-6951 1077-3118 |
| DOI | 10.1063/1.4991608 |
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| Abstract | The carbon incorporation mechanism in GaN(0001) and GaN(000
1
¯
)
during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed. |
|---|---|
| AbstractList | The carbon incorporation mechanism in GaN(0001) and GaN(0001¯) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed. The carbon incorporation mechanism in GaN(0001) and GaN(000 1 ¯ ) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed. |
| Author | Kakimoto, Koichi Krukowski, Stanislaw Kempisty, Pawel Bockowski, Michal Kusaba, Akira Kangawa, Yoshihiro Amano, Hiroshi Shiraishi, Kenji |
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| Cites_doi | 10.1103/PhysRevB.93.245201 10.1063/1.4983453 10.1016/S0022-0248(02)01348-9 10.1002/1521-3951(200212)234:3<864::AID-PSSB864>3.0.CO;2-X 10.1063/1.1498879 10.1088/0256-307X/31/3/037102 10.1016/j.jcrysgro.2016.12.044 10.7567/JJAP.55.05FE04 10.1063/1.4707386 10.1016/j.jcrysgro.2012.10.023 10.1016/j.jcrysgro.2007.12.051 10.1088/0953-8984/14/11/302 10.1039/C5TC03989D 10.1103/PhysRevB.89.035204 10.1143/JJAP.19.2395 10.7567/APEX.10.011003 10.1063/1.4983452 10.1007/s11664-000-0087-3 10.1103/PhysRevB.73.235116 10.1063/1.4962017 10.7567/JJAP.56.070304 |
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| References | Matsubara, Bellotti (c11) 2017 Lyons, Janotti, Van de Walle (c9) 2014 Fichtenbaum, Mates, Keller, DenBaars, Mishra (c22) 2008 Kudrawiec, Gladysiewicz, Janicki, Misiewicz, Cywinski, Cheze, Wolny, Prystawko, Skierbiszewski (c21) 2012 Parish, Keller, Denbaars, Mishra (c3) 2000 Ubukata, Yano, Shimamura, Yamaguchi, Tabuchi, Matsumoto (c5) 2013 Koleske, Wickenden, Henry, Twigg (c4) 2002 Ramos, Furthmüller, Leite, Scolfaro, Bechstedt (c7) 2002 Kaess, Mita, Xie, Reddy, Klump, Hernandez-Balderrama, Washiyama, Franke, Kirste, Hoffmann, Collazo, Sitar (c2) 2016 Zhang, Liu, Pu, Fang, Zhang, Jiang (c6) 2014 Iwinska, Piotrzkowski, Litwin-Staszewska, Sochacki, Amilusik, Fijalkowski, Lucznik, Bockowski (c16) 2017 Wu, Cohen (c17) 2006 Sekiguchi, Shirakawa, Yamamoto, Araidai, Kangawa, Kakimoto, Shiraishi (c15) 2017 Danielsson, Li, Ojamae, Janzen, Pedersen, Forsberg (c14) 2016 Ikenaga, Mishima, Yano, Tabuchi, Matsumoto (c1) 2016 Kusaba, Kangawa, Kempisty, Valencia, Shiraishi, Kumagai, Kakimoto, Koukitu (c20) 2017 Kyrtsos, Matsubara, Bellotti (c13) 2016 Matsubara, Bellotti (c10) 2017 Wright (c8) 2002 Soler, Artacho, Gale, Garcia, Junquera, Ordejón, Sánchez-Portal (c18) 2002 Ogino, Aoki (c12) 1980 (2023061719543206900_c1) 2016; 55 (2023061719543206900_c5) 2013; 370 (2023061719543206900_c9) 2014; 89 (2023061719543206900_c3) 2000; 29 (2023061719543206900_c13) 2016; 93 (2023061719543206900_c11) 2017; 121 (2023061719543206900_c8) 2002; 92 2023061719543206900_c19 (2023061719543206900_c21) 2012; 100 (2023061719543206900_c12) 1980; 19 (2023061719543206900_c18) 2002; 14 (2023061719543206900_c20) 2017; 56 (2023061719543206900_c14) 2016; 4 (2023061719543206900_c22) 2008; 310 (2023061719543206900_c4) 2002; 242 (2023061719543206900_c15) 2017; 468 (2023061719543206900_c16) 2017; 10 (2023061719543206900_c10) 2017; 121 (2023061719543206900_c17) 2006; 73 (2023061719543206900_c6) 2014; 31 (2023061719543206900_c2) 2016; 120 (2023061719543206900_c7) 2002; 234 |
| References_xml | – start-page: 195701 year: 2017 ident: c10 publication-title: J. Appl. Phys. – start-page: 15 year: 2000 ident: c3 publication-title: J. Electron. Mater. – start-page: 05FE04 year: 2016 ident: c1 publication-title: Jpn. J. Appl. Phys., Part 1 – start-page: 864 year: 2002 ident: c7 publication-title: Phys. Status Solidi B – start-page: 863 year: 2016 ident: c14 publication-title: J. Mater. Chem. C – start-page: 011003 year: 2017 ident: c16 publication-title: Appl. Phys. Express – start-page: 2745 year: 2002 ident: c18 publication-title: J. Phys.: Condens. Matter – start-page: 235116 year: 2006 ident: c17 publication-title: Phys. Rev. B – start-page: 070304 year: 2017 ident: c20 publication-title: Jpn. J. Appl. Phys., Part 1 – start-page: 105701 year: 2016 ident: c2 publication-title: J. Appl. Phys. – start-page: 037102 year: 2014 ident: c6 publication-title: Chin. Phys. Lett. – start-page: 245201 year: 2016 ident: c13 publication-title: Phys. Rev. B – start-page: 2395 year: 1980 ident: c12 publication-title: Jpn. J. Appl. Phys., Part 1 – start-page: 950 year: 2017 ident: c15 publication-title: J. Cryst. Growth – start-page: 035204 year: 2014 ident: c9 publication-title: Phys. Rev. B – start-page: 1124 year: 2008 ident: c22 publication-title: J. Cryst. Growth – start-page: 55 year: 2002 ident: c4 publication-title: J. Cryst. Growth – start-page: 269 year: 2013 ident: c5 publication-title: J. Cryst. Growth – start-page: 2575 year: 2002 ident: c8 publication-title: J. Appl. Phys. – start-page: 195702 year: 2017 ident: c11 publication-title: J. Appl. Phys. – start-page: 181603 year: 2012 ident: c21 publication-title: Appl. Phys. Lett. – volume: 93 start-page: 245201 year: 2016 ident: 2023061719543206900_c13 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.93.245201 – volume: 121 start-page: 195702 year: 2017 ident: 2023061719543206900_c11 publication-title: J. Appl. Phys. doi: 10.1063/1.4983453 – volume: 242 start-page: 55 year: 2002 ident: 2023061719543206900_c4 publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(02)01348-9 – volume: 234 start-page: 864 year: 2002 ident: 2023061719543206900_c7 publication-title: Phys. Status Solidi B doi: 10.1002/1521-3951(200212)234:3<864::AID-PSSB864>3.0.CO;2-X – volume: 92 start-page: 2575 year: 2002 ident: 2023061719543206900_c8 publication-title: J. Appl. Phys. doi: 10.1063/1.1498879 – volume: 31 start-page: 037102 year: 2014 ident: 2023061719543206900_c6 publication-title: Chin. Phys. Lett. doi: 10.1088/0256-307X/31/3/037102 – volume: 468 start-page: 950 year: 2017 ident: 2023061719543206900_c15 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2016.12.044 – volume: 55 start-page: 05FE04 year: 2016 ident: 2023061719543206900_c1 publication-title: Jpn. J. Appl. Phys., Part 1 doi: 10.7567/JJAP.55.05FE04 – ident: 2023061719543206900_c19 – volume: 100 start-page: 181603 year: 2012 ident: 2023061719543206900_c21 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4707386 – volume: 370 start-page: 269 year: 2013 ident: 2023061719543206900_c5 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2012.10.023 – volume: 310 start-page: 1124 year: 2008 ident: 2023061719543206900_c22 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2007.12.051 – volume: 14 start-page: 2745 year: 2002 ident: 2023061719543206900_c18 publication-title: J. Phys.: Condens. Matter doi: 10.1088/0953-8984/14/11/302 – volume: 4 start-page: 863 year: 2016 ident: 2023061719543206900_c14 publication-title: J. Mater. Chem. C doi: 10.1039/C5TC03989D – volume: 89 start-page: 035204 year: 2014 ident: 2023061719543206900_c9 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.89.035204 – volume: 19 start-page: 2395 year: 1980 ident: 2023061719543206900_c12 publication-title: Jpn. J. Appl. Phys., Part 1 doi: 10.1143/JJAP.19.2395 – volume: 10 start-page: 011003 year: 2017 ident: 2023061719543206900_c16 publication-title: Appl. Phys. Express doi: 10.7567/APEX.10.011003 – volume: 121 start-page: 195701 year: 2017 ident: 2023061719543206900_c10 publication-title: J. Appl. Phys. doi: 10.1063/1.4983452 – volume: 29 start-page: 15 year: 2000 ident: 2023061719543206900_c3 publication-title: J. Electron. Mater. doi: 10.1007/s11664-000-0087-3 – volume: 73 start-page: 235116 year: 2006 ident: 2023061719543206900_c17 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.73.235116 – volume: 120 start-page: 105701 year: 2016 ident: 2023061719543206900_c2 publication-title: J. Appl. Phys. doi: 10.1063/1.4962017 – volume: 56 start-page: 070304 year: 2017 ident: 2023061719543206900_c20 publication-title: Jpn. J. Appl. Phys., Part 1 doi: 10.7567/JJAP.56.070304 |
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| Snippet | The carbon incorporation mechanism in GaN(0001) and GaN(000
1
¯
)
during MOVPE was investigated using density functional theory (DFT) calculations. The results... The carbon incorporation mechanism in GaN(0001) and GaN(0001¯) during MOVPE was investigated using density functional theory (DFT) calculations. The results... |
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| SubjectTerms | Applied physics Carbon Density functional theory Dependence Fermi surfaces Impurities Incorporation Metalorganic chemical vapor deposition |
| Title | DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ¯ ) metalorganic vapor phase epitaxy |
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