A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking

This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and va...

Full description

Saved in:
Bibliographic Details
Published inIEEE open journal of solid-state circuits Vol. 4; pp. 69 - 82
Main Authors Antolini, Alessio, Lico, Andrea, Zavalloni, Francesco, Scarselli, Eleonora Franchi, Gnudi, Antonio, Torres, Mattia Luigi, Canegallo, Roberto, Pasotti, Marco
Format Journal Article
LanguageEnglish
Published IEEE 2024
Subjects
Accuracy
Analog in-memory computing (AIMC)
Artificial intelligence
drift compensation
In-memory computing
matrix-vector multiplication (MVM)
Nonvolatile memory
Phase change materials
Phase change random access memory
phase-change memory (PCM)
Programming
Solid state circuits
Temperature measurement
Online AccessGet full text
ISSN2644-1349
2644-1349
DOI10.1109/OJSSCS.2024.3432468

Cover

Abstract This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and variability involved in the computational chain are minimized with an optimized iterative program-and-verify algorithm applied to the phase-change memory (PCM) devices. The proposed AIMC scheme is designed and manufactured in a 90-nm STMicroelectronics CMOS technology, with the aim of adding a signed multiply-and-accumulate (MAC) computation feature to a Ge-Rich GeSbTe (GST) embedded PCM array. Experimental characterizations are performed under different operating conditions and show that the mean MAC decrease in time is approximately null at room temperature and reduced by a factor of 3 after 64-h bake at <inline-formula> <tex-math notation="LaTeX">85~{^{\circ }} </tex-math></inline-formula>C. Based on several MAC operations, the estimated <inline-formula> <tex-math notation="LaTeX">512\times 512 </tex-math></inline-formula> matrix-vector-multiplication (MVM) accuracy is 97.4%, whose decrease in time is less than 3% in the worst case.
AbstractList This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and variability involved in the computational chain are minimized with an optimized iterative program-and-verify algorithm applied to the phase-change memory (PCM) devices. The proposed AIMC scheme is designed and manufactured in a 90-nm STMicroelectronics CMOS technology, with the aim of adding a signed multiply-and-accumulate (MAC) computation feature to a Ge-Rich GeSbTe (GST) embedded PCM array. Experimental characterizations are performed under different operating conditions and show that the mean MAC decrease in time is approximately null at room temperature and reduced by a factor of 3 after 64-h bake at <inline-formula> <tex-math notation="LaTeX">85~{^{\circ }} </tex-math></inline-formula>C. Based on several MAC operations, the estimated <inline-formula> <tex-math notation="LaTeX">512\times 512 </tex-math></inline-formula> matrix-vector-multiplication (MVM) accuracy is 97.4%, whose decrease in time is less than 3% in the worst case.
This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and variability involved in the computational chain are minimized with an optimized iterative program-and-verify algorithm applied to the phase-change memory (PCM) devices. The proposed AIMC scheme is designed and manufactured in a 90-nm STMicroelectronics CMOS technology, with the aim of adding a signed multiply-and-accumulate (MAC) computation feature to a Ge-Rich GeSbTe (GST) embedded PCM array. Experimental characterizations are performed under different operating conditions and show that the mean MAC decrease in time is approximately null at room temperature and reduced by a factor of 3 after 64-h bake at <tex-math notation="LaTeX">$85~{^{\circ }}$ </tex-math>C. Based on several MAC operations, the estimated <tex-math notation="LaTeX">$512\times 512$ </tex-math> matrix-vector-multiplication (MVM) accuracy is 97.4%, whose decrease in time is less than 3% in the worst case.
Author Torres, Mattia Luigi
Pasotti, Marco
Zavalloni, Francesco
Lico, Andrea
Antolini, Alessio
Gnudi, Antonio
Scarselli, Eleonora Franchi
Canegallo, Roberto
Author_xml – sequence: 1
  givenname: Alessio
  orcidid: 0000-0003-0952-3839
  surname: Antolini
  fullname: Antolini, Alessio
  email: alessio.antolini2@unibo.it
  organization: ARCES-DEI, University of Bologna, Bologna, Italy
– sequence: 2
  givenname: Andrea
  orcidid: 0000-0001-5267-2421
  surname: Lico
  fullname: Lico, Andrea
  organization: ARCES-DEI, University of Bologna, Bologna, Italy
– sequence: 3
  givenname: Francesco
  orcidid: 0000-0003-0103-8126
  surname: Zavalloni
  fullname: Zavalloni, Francesco
  organization: ARCES-DEI, University of Bologna, Bologna, Italy
– sequence: 4
  givenname: Eleonora Franchi
  orcidid: 0000-0001-6994-2088
  surname: Scarselli
  fullname: Scarselli, Eleonora Franchi
  organization: ARCES-DEI, University of Bologna, Bologna, Italy
– sequence: 5
  givenname: Antonio
  orcidid: 0000-0002-2186-3468
  surname: Gnudi
  fullname: Gnudi, Antonio
  organization: ARCES-DEI, University of Bologna, Bologna, Italy
– sequence: 6
  givenname: Mattia Luigi
  surname: Torres
  fullname: Torres, Mattia Luigi
  organization: Smart Power Technology R&D, STMicroelectronics, Agrate Brianza, Italy
– sequence: 7
  givenname: Roberto
  orcidid: 0000-0002-3381-0697
  surname: Canegallo
  fullname: Canegallo, Roberto
  organization: Smart Power Technology R&D, STMicroelectronics, Agrate Brianza, Italy
– sequence: 8
  givenname: Marco
  orcidid: 0000-0003-4988-9982
  surname: Pasotti
  fullname: Pasotti, Marco
  organization: Smart Power Technology R&D, STMicroelectronics, Agrate Brianza, Italy
BookMark eNptkcFuEzEQhleoSJTSJ4CDX2CDvXbM-hgWSoNaFZEgjtasPU42bOzIdgR5-26yVVVFnDya0fdZM__b4sIHj0XxntEJY1R9fPi-WDSLSUUrMeGCV0LWr4rLSgpRMi7UxYv6TXGd0oZSWk0ZY5xfFv9m5CeCDftMFmaNWyQuRPKjuS8_Q0JLZh76sCJzX97jNsQDacJ2t8-dX5HfXV6TL7Fz-dREnyB3wZPlOob9aj14HUb0Boext3uT4VgvI5g_A_6ueO2gT3j99F4Vv26-Lpvb8u7h27yZ3ZWG1yyXkjrkdlhg2lqJ0lEK7ScqpsOiLZVgwKFwwIaJaVVdM24BK9fSmkplRa34VTEfvTbARu9it4V40AE6fWqEuNIQc2d61IJRC0Yp7qQSlrfAnHQ11JJSNmWGDi4xuvZ-B4e_0PfPQkb1MQwdNimZpI9h6KcwBkyNmIkhpYhOmy6fbpUjdP0zOwZ5zvIz9vzH_1MfRqpDxBeEpIqLmj8CEcyrqg
CODEN IOJSBG
CitedBy_id crossref_primary_10_1021_acs_nanolett_4c05299
crossref_primary_10_1109_ACCESS_2025_3548572
crossref_primary_10_1002_aelm_202400599
crossref_primary_10_3390_electronics13193847
crossref_primary_10_1109_TED_2024_3496445
Cites_doi 10.1109/JETCAS.2016.2547718
10.1073/pnas.1815682116
10.1145/3583781.3590241
10.1109/IEDM.2008.4796656
10.1109/TED.2006.888752
10.1109/JETCAS.2023.3241750
10.1002/aisy.202000040
10.1109/ESSCIRC55480.2022.9911447
10.1007/s00362-012-0429-2
10.1109/JXCDC.2023.3265803
10.1109/JSSC.2022.3140414
10.1109/TED.2022.3233292
10.1038/s41586-020-1942-4
10.1109/ASICON52560.2021.9620412
10.1109/ESSCIRC53450.2021.9567817
10.3390/ma14071624
10.1109/JETCAS.2022.3170152
10.1109/TCSII.2023.3340112
10.1038/s41467-020-16108-9
10.1109/ISSCC42615.2023.10067422
10.1116/1.3301579
10.1109/ICCAD51958.2021.9643488
10.1109/TED.2021.3089987
10.1109/ISCAS.2011.5937569
10.1109/IRPS48203.2023.10118155
10.1109/TED.2019.2894273
10.1109/JSSC.2019.2963616
10.1109/MSSC.2019.2922889
10.1109/TED.2014.2313889
10.1109/JSSC.2016.2597822
10.1109/JETCAS.2016.2528598
10.1063/1.3599559
10.1109/JSSC.2023.3269098
10.1007/978-3-031-26066-7_6
10.1063/1.2825650
10.1063/1.2773688
10.1109/JPROC.2018.2871057
10.1145/3502721
10.1109/ESSCIRC55480.2022.9911379
10.1109/TED.2021.3113300
10.1109/ICECS46596.2019.8964986
10.1109/TED.2021.3118996
10.1109/AICAS57966.2023.10168661
10.1038/ncomms9181
10.1109/TVLSI.2009.2016204
10.1109/TNNLS.2017.2778940
10.1109/TVLSI.2019.2940649
10.1002/advs.202105784
ContentType Journal Article
DBID 97E
ESBDL
RIA
RIE
AAYXX
CITATION
ADTOC
UNPAY
DOA
DOI 10.1109/OJSSCS.2024.3432468
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005–Present
IEEE Xplore Open Access Journals
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL)
CrossRef
Unpaywall for CDI: Periodical Content
Unpaywall
DOAJ Directory of Open Access Journals
DatabaseTitle CrossRef
DatabaseTitleList

Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
– sequence: 2
  dbid: RIE
  name: IEEE Xplore (IEEE/IET Electronic Library - IEL)
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
– sequence: 3
  dbid: UNPAY
  name: Unpaywall
  url: https://proxy.k.utb.cz/login?url=https://unpaywall.org/
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2644-1349
EndPage 82
ExternalDocumentID oai_doaj_org_article_410dac993f694d3ba1f6f8a8600151c0
10.1109/ojsscs.2024.3432468
10_1109_OJSSCS_2024_3432468
10609348
Genre orig-research
GrantInformation_xml – fundername: European Union’s Horizon 2020 Research and Innovation Programme and France, Belgium, Czech Republic, Germany, Italy, Sweden, Switzerland, Türkiye
– fundername: ECSEL Joint Undertaking (JU)
  grantid: 101007321
GroupedDBID 0R~
97E
AAJGR
ABAZT
ABVLG
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
EBS
ESBDL
GROUPED_DOAJ
JAVBF
M~E
OCL
OK1
RIA
RIE
AAYXX
CITATION
ADTOC
UNPAY
ID FETCH-LOGICAL-c381t-60fe3d2645bd6e6f00ab7045343b06acafe4fa1e6fcb98813dae2fb08069d4893
IEDL.DBID RIE
ISSN 2644-1349
IngestDate Fri Oct 03 12:46:34 EDT 2025
Sun Oct 26 04:07:07 EDT 2025
Thu Apr 24 22:57:58 EDT 2025
Tue Jul 01 03:50:41 EDT 2025
Wed Aug 27 01:55:47 EDT 2025
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Language English
License https://creativecommons.org/licenses/by-nc-nd/4.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c381t-60fe3d2645bd6e6f00ab7045343b06acafe4fa1e6fcb98813dae2fb08069d4893
ORCID 0000-0003-0103-8126
0000-0001-5267-2421
0000-0003-4988-9982
0000-0003-0952-3839
0000-0002-2186-3468
0000-0001-6994-2088
0000-0002-3381-0697
OpenAccessLink https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/document/10609348
PageCount 14
ParticipantIDs crossref_citationtrail_10_1109_OJSSCS_2024_3432468
crossref_primary_10_1109_OJSSCS_2024_3432468
unpaywall_primary_10_1109_ojsscs_2024_3432468
doaj_primary_oai_doaj_org_article_410dac993f694d3ba1f6f8a8600151c0
ieee_primary_10609348
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 20240000
2024-00-00
2024-01-01
PublicationDateYYYYMMDD 2024-01-01
PublicationDate_xml – year: 2024
  text: 20240000
PublicationDecade 2020
PublicationTitle IEEE open journal of solid-state circuits
PublicationTitleAbbrev OJSSCS
PublicationYear 2024
Publisher IEEE
Publisher_xml – name: IEEE
References ref13
ref12
ref15
ref14
ref11
ref10
ref17
ref16
ref19
ref18
ref51
ref50
Razavi (ref46) 2001
ref45
ref48
ref42
ref41
ref44
ref43
ref49
ref8
ref7
ref9
ref4
ref3
ref6
ref5
ref40
ref35
ref34
ref37
ref31
Gray (ref47) 2001
ref30
ref33
ref32
ref2
ref1
ref39
ref38
Cheng (ref36)
ref24
ref23
ref26
ref25
ref20
ref22
ref21
ref28
ref27
ref29
References_xml – ident: ref18
  doi: 10.1109/JETCAS.2016.2547718
– ident: ref12
  doi: 10.1073/pnas.1815682116
– ident: ref40
  doi: 10.1145/3583781.3590241
– ident: ref32
  doi: 10.1109/IEDM.2008.4796656
– ident: ref30
  doi: 10.1109/TED.2006.888752
– ident: ref26
  doi: 10.1109/JETCAS.2023.3241750
– ident: ref20
  doi: 10.1002/aisy.202000040
– ident: ref25
  doi: 10.1109/ESSCIRC55480.2022.9911447
– ident: ref51
  doi: 10.1007/s00362-012-0429-2
– ident: ref14
  doi: 10.1109/JXCDC.2023.3265803
– ident: ref21
  doi: 10.1109/JSSC.2022.3140414
– ident: ref24
  doi: 10.1109/TED.2022.3233292
– ident: ref16
  doi: 10.1038/s41586-020-1942-4
– volume-title: Design of Analog CMOS Integrated Circuits
  year: 2001
  ident: ref46
– ident: ref3
  doi: 10.1109/ASICON52560.2021.9620412
– ident: ref11
  doi: 10.1109/ESSCIRC53450.2021.9567817
– ident: ref50
  doi: 10.3390/ma14071624
– ident: ref4
  doi: 10.1109/JETCAS.2022.3170152
– ident: ref49
  doi: 10.1109/TCSII.2023.3340112
– ident: ref41
  doi: 10.1038/s41467-020-16108-9
– ident: ref9
  doi: 10.1109/ISSCC42615.2023.10067422
– ident: ref17
  doi: 10.1116/1.3301579
– ident: ref1
  doi: 10.1109/ICCAD51958.2021.9643488
– ident: ref39
  doi: 10.1109/TED.2021.3089987
– ident: ref19
  doi: 10.1109/ISCAS.2011.5937569
– ident: ref33
  doi: 10.1109/IRPS48203.2023.10118155
– ident: ref44
  doi: 10.1109/TED.2019.2894273
– ident: ref6
  doi: 10.1109/JSSC.2019.2963616
– ident: ref2
  doi: 10.1109/MSSC.2019.2922889
– ident: ref27
  doi: 10.1109/TED.2014.2313889
– ident: ref38
  doi: 10.1109/JSSC.2016.2597822
– ident: ref22
  doi: 10.1109/JETCAS.2016.2528598
– ident: ref28
  doi: 10.1063/1.3599559
– ident: ref8
  doi: 10.1109/JSSC.2023.3269098
– ident: ref13
  doi: 10.1007/978-3-031-26066-7_6
– ident: ref29
  doi: 10.1063/1.2825650
– ident: ref23
  doi: 10.1063/1.2773688
– ident: ref5
  doi: 10.1109/JPROC.2018.2871057
– ident: ref10
  doi: 10.1145/3502721
– ident: ref31
  doi: 10.1109/ESSCIRC55480.2022.9911379
– ident: ref35
  doi: 10.1109/TED.2021.3113300
– ident: ref34
  doi: 10.1109/ICECS46596.2019.8964986
– start-page: 3.4.1
  volume-title: Proc. Int. Electron Devices Meeting
  ident: ref36
  article-title: A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material
– ident: ref45
  doi: 10.1109/TED.2021.3118996
– ident: ref43
  doi: 10.1109/AICAS57966.2023.10168661
– volume-title: Analysis and Design of Analog Integrated Circuits
  year: 2001
  ident: ref47
– ident: ref37
  doi: 10.1038/ncomms9181
– ident: ref48
  doi: 10.1109/TVLSI.2009.2016204
– ident: ref15
  doi: 10.1109/TNNLS.2017.2778940
– ident: ref7
  doi: 10.1109/TVLSI.2019.2940649
– ident: ref42
  doi: 10.1002/advs.202105784
SSID ssj0002511133
Score 2.3207784
Snippet This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is...
SourceID doaj
unpaywall
crossref
ieee
SourceType Open Website
Open Access Repository
Enrichment Source
Index Database
Publisher
StartPage 69
SubjectTerms Accuracy
Analog in-memory computing (AIMC)
Artificial intelligence
drift compensation
In-memory computing
matrix-vector multiplication (MVM)
Nonvolatile memory
Phase change materials
Phase change random access memory
phase-change memory (PCM)
Programming
Solid state circuits
Temperature measurement
SummonAdditionalLinks – databaseName: DOAJ Directory of Open Access Journals
  dbid: DOA
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV07T8MwELZQF2BAPEV5yQMjASdx3GQshapUKiAVBFtkOzYUlbRqUwH_nrskREFIsLDGj1h3J3_3WfZ3hBx7AlHW-kBLGHO4cq0T-j5shoB2bqiAkuSPxAbXonfP-4_BY63UF94JK-SBC8OdcZclUgOKWhHxxFfStcKGMkSgDlyds3UWRjUyhXswJs7AvkqZIZdFZzf94bAzBELo8VN8TMlRXLUGRblif1liZZUsL9Kp_HiT43ENbbrrZK1ME2m7WN4GWTLpJlmtiQdukfc2xRvwk0VGh2D5V0Mh_6S3nYFzDsiUUJQbmTzRq9QZ4G3aD1oUcICx9GGUPdOL2chm-Udgsrl_6F1RtIdW6rPQnKIgLIYGBVjTeLC-Te67l3ednlPWUXA04HHmCGaNn4BPApUIIyxjUrUglQMzKCakltZwK11o0SoKQ9dPpPGsglxSRAmK0-yQRjpJzS6hUgQaSEsUSNnigrWkr4zhXFlpYDLjNYn3ZdJYlyLjWOtiHOdkg0Vx4YcY_RCXfmiSk2rQtNDY-L37Ofqq6ooC2fkHCJu4DJv4r7Bpkm30dO1_gkU-h8mdyvU_FjN5mc_1_Nti9v5jMftkBecsTnYOSCObLcwh5DqZOsrD-hO5Lfbe
  priority: 102
  providerName: Directory of Open Access Journals
– databaseName: Unpaywall
  dbid: UNPAY
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT-MwELagHBCHheUhugLkwx5xcRLHTY6lgFikskilAk6R7di7sN0U0VQ8fj0zianKrkBw9TueceabxPMNId9DiVbWReCWcM6EDhxLoghehmDtgkSDS1IFifVO5fFAnFzGl55nG2NhZv_fBzzdG92MxwZptUPRwhhIIZN5siBjAN4NsjA4PetcYfo4mI8h0Z7nFXqj5yvbU1H0-5wqS2RxUtyqx3s1HM6Yl6PlOm57XLES4q2SP61JqVvm6R_Oxg-ufIV88TCTdmq9-ErmbLFKlmbIB9fIQ4fiDfrRpKR9kNxfSwG_0rNuj-2DZcsp0pWMftEfBevhbdxHWieAgL704rr8TQ_url1ZFYInXMmXntdJf-iUvRaqCySURdWiYBYNfphfJ4Ojw_PuMfN5GJgBe14yyZ2NctjjWOfSSse50m2AgvBUmktllLPCqQBqjE6TJIhyZUOnAYvKNEdymw3SKEaF3SRUydiA05PGSrWF5G0VaWuF0E5ZGMyGTRK-SCgznqQcc2UMs8pZ4Wn286Tf7_Yz3NbMb2uT7E473dYcHe8330fRT5siwXZVANLL_HnNRMBzZQC8OZmKPNIqcNIlKkF8GAeGN8k6Ks7MfJKnkYDB2VST_ltMrRKvFvPtk-23SKO8m9htQEKl3vEn4BkHpQIP
  priority: 102
  providerName: Unpaywall
Title A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking
URI https://ieeexplore.ieee.org/document/10609348
https://doi.org/10.1109/ojsscs.2024.3432468
https://doaj.org/article/410dac993f694d3ba1f6f8a8600151c0
UnpaywallVersion publishedVersion
Volume 4
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVAON
  databaseName: DOAJ Directory of Open Access Journals
  customDbUrl:
  eissn: 2644-1349
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0002511133
  issn: 2644-1349
  databaseCode: DOA
  dateStart: 20210101
  isFulltext: true
  titleUrlDefault: https://www.doaj.org/
  providerName: Directory of Open Access Journals
– providerCode: PRVHPJ
  databaseName: ROAD: Directory of Open Access Scholarly Resources
  customDbUrl:
  eissn: 2644-1349
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0002511133
  issn: 2644-1349
  databaseCode: M~E
  dateStart: 20210101
  isFulltext: true
  titleUrlDefault: https://road.issn.org
  providerName: ISSN International Centre
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3Nb9MwFH9i4wA78DlEB1Q-cCTFSRw3OXZl05jUMqmrGKfIdmwYdMm0JoJx4G_nPSeLCgjEJYr8FSs_O-8jfr8H8DKSJGVdjGYJ54HQoQvSOMaPIUq7MNVokvggsdlcHi3F8Vly1gWr-1gYa60_fGZHdOv_5ReVachVhjtcogEu0i3YGqeyDdbqHSqkK6PB1TELhTx7_e54sZgu0AaMxIjiJwXxqW5IH0_S32VV2YE7TXmprr-q1WpDwBzeh_nN1NpzJV9GTa1H5vtvrI3_PfcHcK9TNdmkXRsP4ZYtH8HOBgHhY_g2YXSKvmpqtkD0LixDHZadTGfBPkq3ghFlSfWRvS2DGZ3IvWZtEgjsy96f15_Ym6tzV_tCtIY9xuy0TfzDegZbrC6JVJaWF0PRaMg5vwvLw4PT6VHQ5WIIDMr0OpDc2bhAXBNdSCsd50qPUR3E96q5VEY5K5wKscboLE3DuFA2chr1UZkVRHDzBLbLqrRPgSmZGDR8skSpsZB8rGJtrRDaKYuD2WgA0Q1GuemIyilfxir3BgvP8hbYnIDNO2AH8KrvdNnydPy7-T6B3zclkm1fgJjl3Z7NRcgLZVCBczITRaxV6KRLVUo6YhIaPoBdwnnjeS3EAwj6tfTHZKrP67VZ_zKZvb-M8wzuUrPW4fMctuurxr5AFajWQ-86wOvsx8HQb4Mh3F7OTyYffgIhzQUj
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwEB5BOZQeyquI5ekDR7I4ieNNju1CtS3dBWm3orfIdmzasiRVN1Epv54ZJ40WEIhb5NjOKJ-dmXFmvgF4HUnSsi5Gt4TzQOjQBWkc48cQtV2YanRJfJLYdCYnx-LwJDnpktV9Loy11gef2SFd-n_5RWUaOirDHS7RARfpbbiTCCGSNl2rP1Ihaxldro5bKOTZ24-H8_l4jl5gJIaUQSmIUXVN_3ia_q6uyhZsNuWFur5Sy-Waitm_B7Mb4drIkq_DptZD8-M33sb_lv4-bHfGJtttV8cDuGXLh7C1RkH4CL7vMoqjr5qazRG_b5ahFcs-jafBHuq3ghFpSfWFHZTBlGJyr1lbBgLHss9n9Sl7d3nmat-I_rBHmS3a0j-s57DF2yXRytICY6gcDR3P78Dx_vvFeBJ01RgCg1q9DiR3Ni4Q2UQX0krHudIjNAjxvWoulVHOCqdCvGN0lqZhXCgbOY0WqcwKorh5DBtlVdonwJRMDLo-WaLUSEg-UrG2VgjtlMXJbDSA6Aaj3HRU5VQxY5l7l4VneQtsTsDmHbADeNMPumiZOv7dfY_A77sSzbZvQMzybtfmIuSFMmjCOZmJItYqdNKlKiUrMQkNH8AO4bz2vBbiAQT9WvpDmOp8tTKrX4R5-pd5XsHmZDE9yo8OZh-ewV0a0h7_PIeN-rKxL9AgqvVLvw1-AnrrBJo
linkToUnpaywall http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT-MwELagHBCHheUhugLkwx5xcRLHTY6lgFikskilAk6R7di7sN0U0VQ8fj0zianKrkBw9TueceabxPMNId9DiVbWReCWcM6EDhxLoghehmDtgkSDS1IFifVO5fFAnFzGl55nG2NhZv_fBzzdG92MxwZptUPRwhhIIZN5siBjAN4NsjA4PetcYfo4mI8h0Z7nFXqj5yvbU1H0-5wqS2RxUtyqx3s1HM6Yl6PlOm57XLES4q2SP61JqVvm6R_Oxg-ufIV88TCTdmq9-ErmbLFKlmbIB9fIQ4fiDfrRpKR9kNxfSwG_0rNuj-2DZcsp0pWMftEfBevhbdxHWieAgL704rr8TQ_url1ZFYInXMmXntdJf-iUvRaqCySURdWiYBYNfphfJ4Ojw_PuMfN5GJgBe14yyZ2NctjjWOfSSse50m2AgvBUmktllLPCqQBqjE6TJIhyZUOnAYvKNEdymw3SKEaF3SRUydiA05PGSrWF5G0VaWuF0E5ZGMyGTRK-SCgznqQcc2UMs8pZ4Wn286Tf7_Yz3NbMb2uT7E473dYcHe8330fRT5siwXZVANLL_HnNRMBzZQC8OZmKPNIqcNIlKkF8GAeGN8k6Ks7MfJKnkYDB2VST_ltMrRKvFvPtk-23SKO8m9htQEKl3vEn4BkHpQIP
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Readout+Scheme+for+PCM-Based+Analog+In-Memory+Computing+With+Drift+Compensation+Through+Reference+Conductance+Tracking&rft.jtitle=IEEE+open+journal+of+solid-state+circuits&rft.au=Antolini%2C+Alessio&rft.au=Lico%2C+Andrea&rft.au=Zavalloni%2C+Francesco&rft.au=Scarselli%2C+Eleonora+Franchi&rft.date=2024&rft.pub=IEEE&rft.eissn=2644-1349&rft.volume=4&rft.spage=69&rft.epage=82&rft_id=info:doi/10.1109%2FOJSSCS.2024.3432468&rft.externalDocID=10609348
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2644-1349&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2644-1349&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2644-1349&client=summon