Anomalous dewetting growth of Si on Ag(111)
We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW)...
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| Published in | Nanoscale Vol. 14; no. 39; pp. 14623 - 14629 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Cambridge
Royal Society of Chemistry
13.10.2022
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| Subjects | |
| Online Access | Get full text |
| ISSN | 2040-3364 2040-3372 2040-3372 |
| DOI | 10.1039/d2nr03409c |
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| Abstract | We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials.
We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. |
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| AbstractList | We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials. We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials. We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials.We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials. |
| Author | Arafune, Ryuichi Takagi, Noriaki Kawahara, Kazuaki Kawakami, Naoya Minamitani, Emi Lin, Chun-Liang |
| AuthorAffiliation | International Center for Materials Nanoarchitectonics Kyoto University Institute for Molecular Science National Institute for Materials Science The University of Tokyo Department of Electrophysics Institute of Engineering Innovation Graduate School of Human and Environmental Studies National Yang-Ming Chiao Tung University |
| AuthorAffiliation_xml | – name: National Yang-Ming Chiao Tung University – name: Institute of Engineering Innovation – name: Graduate School of Human and Environmental Studies – name: Department of Electrophysics – name: The University of Tokyo – name: Kyoto University – name: International Center for Materials Nanoarchitectonics – name: National Institute for Materials Science – name: Institute for Molecular Science |
| Author_xml | – sequence: 1 givenname: Naoya surname: Kawakami fullname: Kawakami, Naoya – sequence: 2 givenname: Ryuichi surname: Arafune fullname: Arafune, Ryuichi – sequence: 3 givenname: Emi surname: Minamitani fullname: Minamitani, Emi – sequence: 4 givenname: Kazuaki surname: Kawahara fullname: Kawahara, Kazuaki – sequence: 5 givenname: Noriaki surname: Takagi fullname: Takagi, Noriaki – sequence: 6 givenname: Chun-Liang surname: Lin fullname: Lin, Chun-Liang |
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| Cites_doi | 10.1088/2053-1583/aacfc1 10.1016/j.apmt.2017.09.010 10.1103/PhysRevLett.96.086104 10.1103/PhysRevLett.108.245501 10.1103/PhysRevLett.102.236804 10.1007/s10820-006-9042-9 10.1021/nn503000w 10.1088/2053-1583/3/2/025034 10.1021/jp505602c 10.1103/PhysRevB.63.115415 10.1103/PhysRevLett.80.2873 10.1103/PhysRevMaterials.3.104002 10.1016/j.susc.2016.03.029 10.1021/acsnano.6b07593 10.1143/JPSJ.81.064705 10.1039/C7NR06833F 10.1063/1.4894871 10.1021/acsnano.6b06198 10.1103/PhysRevLett.95.226801 10.1016/j.susc.2005.12.030 10.1063/1.4802782 10.1103/PhysRevB.92.245127 10.3389/fchem.2019.00202 10.1063/1.3524215 10.1103/PhysRevB.68.144416 10.1088/2053-1583/4/1/015008 10.1063/1.1707904 10.1063/1.1726787 10.1021/acs.jpcc.9b04343 10.1126/science.1102896 10.1002/adma.202006043 10.1143/APEX.5.045802 10.1016/0042-207X(88)90004-8 10.1088/2053-1583/aa65b8 10.1002/adma.201304783 10.1103/PhysRevLett.115.026102 10.1016/j.rser.2018.09.044 10.1103/PhysRevLett.107.076802 10.1002/adma.201800865 10.1021/nl301047g 10.1103/PhysRevLett.100.186104 10.1002/adma.200701684 10.1103/PhysRevB.89.241403 10.1016/j.surfrep.2016.03.002 10.1002/adma.201904302 10.1021/nl304347w 10.1103/PhysRevLett.108.155501 10.1103/PhysRevB.92.045415 10.1021/acs.nanolett.6b04804 10.1063/1.4860964 10.1016/j.commatsci.2004.12.005 10.1103/PhysRevLett.109.055502 10.1021/acs.jpcc.6b00717 10.1103/PhysRevLett.81.4464 |
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| Title | Anomalous dewetting growth of Si on Ag(111) |
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