Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors

• Published in: Metals and materials international Vol. 16; no. 6; pp. 953 - 958
• Main Authors: Gong, Su Cheol, Bang, Seokhwan, Jeon, Hyeongtag, Park, Hyung-Ho, Chang, Young Chul, Chang, Ho Jung
• Format: Journal Article
• Language: English
• Published: Springer The Korean Institute of Metals and Materials 01.12.2010; Springer Nature B.V; 대한금속·재료학회
• Subjects: Atomic structure; Characterization and Evaluation of Materials; Chemistry and Materials Science; Engineering Thermodynamics; Heat and Mass Transfer; Machines; Magnetic Materials; Magnetism; Manufacturing; Materials Science; Metallic Materials; Processes; Solid Mechanics; 재료공학; ZnO semiconductors; X-ray diffraction; thin film transistors; atomic layer deposition; electrical properties; PVP (poly-4-vinylphenol) insulators
• ISSN: 1598-9623; 2005-4149
• DOI: 10.1007/s12540-010-1214-1

Organic-inorganic thin film transistors (OITFTs) with Al/ZnO/PVP structure on Si substrate were fabricated and studied as to their structural and electrical properties. PVP (poly-4-vinylphenol) organic gate insulator was coated on Si substrate by spin coating method. The ZnO was deposited as an active layer by using the atomic layer deposition (ALD) method on PVP/Si substrate at various temperatures ranging from 80 to 140 °C. The structural and electrical properties of ZnO thin films were analyzed by X-ray diffraction and by hall-effect measurement system for optimum process of the OITFT. The grain size and carrier concentration of ZnO films increased, and the resistivity decreased as the deposition temperature increased from 80 to 140 °C. The field effect mobility, on/off current ratio and threshold voltage of OITFTs with ZnO active layer deposited at 100 °C were found to be 0.37 cm 2 /V·s, 5×10 2 and 5 V, respectively.