李志鹏, 刘. 柴. 杨. 孙. (2016). Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave. Chinese physics B, 25(4), 461-466. https://doi.org/10.1088/1674-1056/25/4/048504
Chicago Style (17th ed.) Citation李志鹏, 刘阳 柴常春 杨银堂 孙静. "Damage Effect and Mechanism of the GaAs High Electron Mobility Transistor Induced by High Power Microwave." Chinese Physics B 25, no. 4 (2016): 461-466. https://doi.org/10.1088/1674-1056/25/4/048504.
MLA (9th ed.) Citation李志鹏, 刘阳 柴常春 杨银堂 孙静. "Damage Effect and Mechanism of the GaAs High Electron Mobility Transistor Induced by High Power Microwave." Chinese Physics B, vol. 25, no. 4, 2016, pp. 461-466, https://doi.org/10.1088/1674-1056/25/4/048504.
Warning: These citations may not always be 100% accurate.