Failure Estimates for SiC Power MOSFETs in Space Electronics

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space a...

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Bibliographic Details
Published inAerospace Vol. 5; no. 3; p. 67
Main Authors Galloway, Kenneth F., Witulski, Arthur F., Schrimpf, Ronald D., Sternberg, Andrew L., Ball, Dennis R., Javanainen, Arto, Reed, Robert A., Sierawski, Brian D., Lauenstein, Jean-Marie
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.09.2018
Subjects
Approximation
Bias
Burnout
Energy transfer
Failure
Failure rates
Field effect transistors
Heat conductivity
Heavy ions
High temperature
Ion irradiation
Irradiation
Linear energy transfer (LET)
Metal oxide semiconductors
MOSFETs
power devices
power MOSFETs
Radiation
reliability
Semiconductor devices
Semiconductors
Silicon
Silicon carbide
single event effects
single-event burnout
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ISSN2226-4310
2226-4310
DOI10.3390/aerospace5030067

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Summary:Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.
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ISSN:2226-4310
2226-4310
DOI:10.3390/aerospace5030067