Failure Estimates for SiC Power MOSFETs in Space Electronics - Galloway, Kenneth F.; Witulski, Arthur F.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Ball, Dennis R.; Javanainen, Arto; Reed, Robert A.; Sierawski, Brian D.; Lauenstein, Jean-Marie (Aerospace, 2018)
Keywords: Approximation; Bias; Burnout; Energy transfer; Failure; Failure rates; Field effect transistors; Heat conductivity; Heavy ions; High temperature; Ion irradiation; Irradiation; Linear energy transfer (LET); Metal oxide semiconductors; MOSFETs; power devices; power MOSFETs; Radiation; reliability; Semiconductor devices; Semiconductors; Silicon; Silicon carbide; single event effects; single-event burnout