Effects of microwave pulse-width damage on a bipolar transistor

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure...

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Published inChinese physics B Vol. 21; no. 5; pp. 675 - 680
Main Author 马振洋 柴常春 任兴荣 杨银堂 陈斌 赵颖博
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Bipolar transistors
Damage
Devices
Direct current
Electric potential
Microwaves
Semiconductor devices
Thresholds
Voltage
双极晶体管
损害
曲线拟合方法
直流脉冲
脉冲宽度
脉宽
设备损坏
高功率微波
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/5/058502

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Summary:This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.
Bibliography:bipolar transistor; high power microwave; pulse width effects
Ma Zhen-Yang,Chai Chang-Chun,Ren Xing-Rong,Yang Yin-Tang,Chen Bin,and Zhao Ying-Bo School of Microelectronics,Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xi＇an 710071,China
This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.
11-5639/O4
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SourceType-Scholarly Journals-1
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/5/058502