赵颖博, 马. 柴. 任. 杨. 陈. (2012). Effects of microwave pulse-width damage on a bipolar transistor. Chinese physics B, 21(5), 675-680. https://doi.org/10.1088/1674-1056/21/5/058502
Chicago Style (17th ed.) Citation赵颖博, 马振洋 柴常春 任兴荣 杨银堂 陈斌. "Effects of Microwave Pulse-width Damage on a Bipolar Transistor." Chinese Physics B 21, no. 5 (2012): 675-680. https://doi.org/10.1088/1674-1056/21/5/058502.
MLA (9th ed.) Citation赵颖博, 马振洋 柴常春 任兴荣 杨银堂 陈斌. "Effects of Microwave Pulse-width Damage on a Bipolar Transistor." Chinese Physics B, vol. 21, no. 5, 2012, pp. 675-680, https://doi.org/10.1088/1674-1056/21/5/058502.
Warning: These citations may not always be 100% accurate.