The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters - 马振洋 柴常春 任兴荣 杨银堂 赵颖博 乔丽萍 (Chinese physics B, 2013)
Keywords: Bipolar transistors; Damage; Electric power generation; Falling; Fittings; Microwaves; Pulse repetition frequency; Semiconductor devices; 上升时间; 函数; 双极型晶体管; 峰值温度; 损害; 脉冲参数; 脉冲微波; 脉冲重复频率