The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters
In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage me...
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| Published in | Chinese physics B Vol. 22; no. 2; pp. 534 - 538 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/2/028502 |
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| Abstract | In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power. |
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| AbstractList | In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves (HPMs), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power. In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power. |
| Author | 马振洋 柴常春 任兴荣 杨银堂 赵颖博 乔丽萍 |
| AuthorAffiliation | School of Microelectronics, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Mater/als and Devices, Xidian University, Xi＇an 710071, China |
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| CitedBy_id | crossref_primary_10_1049_smt2_12189 crossref_primary_10_1016_j_microrel_2015_06_002 crossref_primary_10_7498_aps_65_038402 crossref_primary_10_7498_aps_66_078401 crossref_primary_10_1088_1674_4926_39_9_094005 crossref_primary_10_1587_elex_16_20190498 crossref_primary_10_1088_1674_1056_22_6_068502 crossref_primary_10_1109_TEMC_2018_2888520 crossref_primary_10_1109_ACCESS_2020_3045621 |
| Cites_doi | 10.1088/1674-4926/31/4/044005 10.7498/aps.61.078501 10.1088/1674-1056/21/5/058502 10.1109/TEMC.2011.2177841 10.1109/TEMC.2007.915281 10.1080/02726340902953305 10.7498/aps.59.8063 10.1088/1674-1056/18/5/056 10.1016/j.sse.2009.09.006 10.1109/TEMC.2004.831842 10.1109/LED.2003.821669 10.1109/TDMR.2010.2050692 10.1109/TEMC.2004.831814 10.7498/aps.59.8118 |
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| Notes | In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power. bipolar transistor,high power microwave,pulse repetition frequency,duty cycle MaZhen-Yang , ChaiChang-Chun , RenXing-Rong , Yang Yin-Tang , Zhao Ying-Bo , Qiao Li-Ping（ School of Microelectronics, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071, China） 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Ma Z Y (12) 2012; 61 15 Ma Q (6) 2009; 18 Klunder C (11) 2010 Ma Z Y (13) 2012; 21 1 Xi X W (16) 2010; 31 Zhang B (14) 2010; 59 3 4 5 Ma Z Y (17) 2012; 21 8 9 Yoo M (2) 2010 Chai C C (7) 2010; 59 10 |
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| SubjectTerms | Bipolar transistors Damage Electric power generation Falling Fittings Microwaves Pulse repetition frequency Semiconductor devices 上升时间 函数 双极型晶体管 峰值温度 损害 脉冲参数 脉冲微波 脉冲重复频率 |
| Title | The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters |
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