乔丽萍, 马. 柴. 任. 杨. 赵. (2013). The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters. Chinese physics B, 22(2), 534-538. https://doi.org/10.1088/1674-1056/22/2/028502
Chicago Style (17th ed.) Citation乔丽萍, 马振洋 柴常春 任兴荣 杨银堂 赵颖博. "The Pulsed Microwave Damage Trend of a Bipolar Transistor as a Function of Pulse Parameters." Chinese Physics B 22, no. 2 (2013): 534-538. https://doi.org/10.1088/1674-1056/22/2/028502.
MLA (9th ed.) Citation乔丽萍, 马振洋 柴常春 任兴荣 杨银堂 赵颖博. "The Pulsed Microwave Damage Trend of a Bipolar Transistor as a Function of Pulse Parameters." Chinese Physics B, vol. 22, no. 2, 2013, pp. 534-538, https://doi.org/10.1088/1674-1056/22/2/028502.
Warning: These citations may not always be 100% accurate.