Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications

Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, na...

Full description

Saved in:
Bibliographic Details
Published inJournal of low power electronics and applications Vol. 12; no. 3; p. 44
Main Authors Isah, Aliyu, Bilbault, Jean-Marie
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.09.2022
Subjects
analysis
argumentation
Capacitors
circuit elements
circuit variables
Circuits
Design
Electronic components
Magnetic flux
memristor
Memristors
Resistors
technology
Technology assessment
Transistors
Online AccessGet full text
ISSN2079-9268
2079-9268
DOI10.3390/jlpea12030044

Cover

Abstract Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, namely voltage, magnetic flux, current and electric charge. The memory resistor (or memristor) was claimed to be the fourth basic passive circuit element, complementing the resistor, capacitor and inductor. This paper presents a review on the four basic passive circuit elements. After a brief recall on the first three known basic passive circuit elements, a thorough description of the memristor follows. Memristor sparks interest in the scientific community due to its interesting features, for example nano-scalability, memory capability, conductance modulation, connection flexibility and compatibility with CMOS technology, etc. These features among many others are currently in high demand on an industrial scale. For this reason, thousands of memristor-based applications are reported. Hence, the paper presents an in-depth overview of the philosophical argumentations of memristor, technologies and applications.
AbstractList Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, namely voltage, magnetic flux, current and electric charge. The memory resistor (or memristor) was claimed to be the fourth basic passive circuit element, complementing the resistor, capacitor and inductor. This paper presents a review on the four basic passive circuit elements. After a brief recall on the first three known basic passive circuit elements, a thorough description of the memristor follows. Memristor sparks interest in the scientific community due to its interesting features, for example nano-scalability, memory capability, conductance modulation, connection flexibility and compatibility with CMOS technology, etc. These features among many others are currently in high demand on an industrial scale. For this reason, thousands of memristor-based applications are reported. Hence, the paper presents an in-depth overview of the philosophical argumentations of memristor, technologies and applications.
Author Isah, Aliyu
Bilbault, Jean-Marie
Author_xml – sequence: 1
  givenname: Aliyu
  orcidid: 0000-0003-3129-602X
  surname: Isah
  fullname: Isah, Aliyu
– sequence: 2
  givenname: Jean-Marie
  surname: Bilbault
  fullname: Bilbault, Jean-Marie
BookMark eNqFkM1r3DAQxU1JoWmaY--CXutUX7ak3rZL2i6kBEJ6NrPyOKtFK7mSNmH_-7rrUJJCyVxmGN77zfDeVichBqyq94xeCGHop60fERinglIpX1WnnCpTG97qkyfzm-o85y2dyjChpTitNjd47_CBxEDKBskXyM6SpUt27wq59LjDUDKB0JMfuEsul5jIKhRMY8ICxcXwmSwC-EN2-SO5RbsJ0ce7w9GyGEfv7FGV31WvB_AZzx_7WfXz6-Xt8nt9df1ttVxc1VYoWmo9_aoBGtYIJVplUXMcOGijWmuapqdrzlH1ZpA9Si4HplTLFNVAxSAl0-KsWs3cPsK2G5PbQTp0EVx3XMR010EqznrsDLasbdbrHtdCWq2hZYZDz1toUXEjJ9bFzNqHEQ4P4P1fIKPdn9i7Z7FPhg-zYUzx1x5z6bZxn6Z4csfVdKsRVPNJVc8qm2LOCYcXqeIfvXVz9iWB8_9x_Qa-iKNm
CitedBy_id crossref_primary_10_1007_s11431_023_2637_1
crossref_primary_10_1007_s12633_025_03288_6
crossref_primary_10_1016_j_matpr_2023_05_579
crossref_primary_10_1002_mma_10574
crossref_primary_10_1109_ACCESS_2024_3440056
crossref_primary_10_3390_mi14112061
crossref_primary_10_1063_5_0206891
crossref_primary_10_18311_jmmf_2023_47974
crossref_primary_10_1134_S1063739723600723
crossref_primary_10_1007_s10825_024_02223_z
crossref_primary_10_1016_j_chaos_2024_115320
crossref_primary_10_3390_jlpea12040054
crossref_primary_10_3390_app14209484
crossref_primary_10_70322_dav_2025_10004
crossref_primary_10_3390_mi15010051
crossref_primary_10_1016_j_chaos_2024_115738
Cites_doi 10.1007/s00339-011-6264-9
10.1109/TED.2016.2630925
10.1038/nmat2009
10.1039/c3nr01176c
10.1109/TCSI.2012.2215714
10.1038/nature08940
10.1109/ICECS.2010.5724666
10.1007/978-94-007-4491-2_3
10.1038/s41578-019-0159-3
10.1142/S0218127410026514
10.1002/adfm.201901106
10.3390/ma13040938
10.1016/S1369-7021(11)70299-1
10.3390/ma12213482
10.13164/re.2015.0319
10.1002/cta.2186
10.1109/ULTSYM.2016.7728885
10.1109/EEEI.2012.6377081
10.1007/s10825-019-01306-6
10.1109/TCSI.2012.2188957
10.1002/jnm.786
10.1109/2.31
10.1109/TVLSI.2010.2049867
10.1038/s41598-018-29394-7
10.1039/C4MH00067F
10.1038/srep04906
10.3390/ma12142260
10.1143/JJAP.44.7340
10.1038/s41598-022-07505-9
10.1038/s41565-020-0655-z
10.7498/aps.65.120503
10.1038/srep21331
10.1063/1.4795145
10.1002/admt.202100745
10.1109/TNANO.2009.2038610
10.1021/acs.accounts.8b00553
10.1049/el.2009.3511
10.1109/TCAD.2010.2042900
10.1088/0268-1242/29/10/104001
10.1088/1361-6463/aade3f
10.1142/9789814434805_0041
10.1038/ncomms14736
10.1016/j.scib.2021.04.014
10.1002/aisy.202000085
10.1021/acsnano.0c09441
10.1109/JPROC.2009.2021077
10.1109/TIE.2014.2356439
10.1038/s41928-018-0092-2
10.1109/TCSI.2013.2256171
10.1109/ECCTD.2009.5274934
10.1080/17445760.2017.1321761
10.1109/LED.2008.2012270
10.1109/PROC.1976.10092
10.3390/ma11112102
10.1038/srep22970
10.1063/1.1861508
10.1109/ISCAS.2013.6571817
10.1002/adma.201705914
10.1109/ISCAS.2014.6865448
10.1021/nl302912t
10.1016/j.sysarc.2022.102480
10.1002/adfm.202006773
10.1080/00018732.2010.544961
10.3389/frcmn.2021.647528
10.1587/elex.12.20150149
10.1016/j.sse.2012.06.016
10.1049/el.2019.3322
10.1109/TNNLS.2012.2204770
10.1088/0143-0807/22/4/313
10.7873/DATE.2015.1136
10.3390/ma12203451
10.1109/TCSI.2009.2038539
10.1166/jctn.2011.1708
10.1088/1674-1056/21/10/108501
10.5617/jeb.305
10.3389/fncom.2021.755405
10.3390/nano12020279
10.1049/iet-spr.2020.0136
10.1016/j.aeue.2018.04.020
10.1088/1361-6641/ab3584
10.1016/j.chaos.2018.08.030
10.1109/JPROC.2014.2374754
10.1016/j.nanoen.2018.12.057
10.1049/el.2011.2913
10.1007/s11432-011-4410-9
10.1103/PhysRevB.85.165428
10.1088/1361-6463/aae680
10.1166/nnl.2014.1888
10.1049/el.2013.3108
10.1109/TED.2011.2158004
10.1002/aelm.202000457
10.1038/s41928-019-0204-7
10.1038/nmat4756
10.1038/41012
10.1038/nature06932
10.1038/nmat3415
10.3390/ma12213573
10.1038/nature25747
10.1109/TCT.1971.1083337
10.1109/TNNLS.2014.2334701
10.1088/0022-3727/46/9/093001
10.3390/ma13010166
10.1021/nl203687n
10.1109/JPROC.2011.2166369
10.1021/nl904092h
10.1088/0143-0807/30/4/001
10.1038/npre.2009.3010.1
10.4161/15592316.2014.972887
10.1038/nature14441
10.1103/PhysRevB.78.113309
10.1109/JPROC.2012.2190812
10.1002/aelm.202000010
10.1016/j.mejo.2016.11.006
10.1038/s41928-017-0006-8
10.1109/MAP.2013.6529381
10.1007/s11432-012-4572-0
10.1109/NANOARCH.2008.4585796
10.1109/FUZZ-IEEE.2015.7338105
10.3390/electronics10131577
10.1155/2018/1747865
10.1142/9789814434805_0038
10.1166/jno.2018.2297
10.3390/ma12172745
10.1038/srep11657
10.1103/PhysRevE.85.041918
10.1109/MWSCAS.2010.5548670
10.1109/BEC.2018.8600977
10.1109/JPROC.2011.2166749
10.1126/sciadv.abc4797
10.1038/d41586-018-02025-x
10.1038/s41586-020-1942-4
10.1109/JPROC.2009.2022882
10.1016/j.cnsns.2015.09.011
ContentType Journal Article
Copyright 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
Copyright_xml – notice: 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
DBID AAYXX
CITATION
7SP
8FD
8FE
8FG
ABUWG
AFKRA
ARAPS
AZQEC
BENPR
BGLVJ
CCPQU
DWQXO
F28
FR3
HCIFZ
L7M
P5Z
P62
PHGZM
PHGZT
PIMPY
PKEHL
PQEST
PQGLB
PQQKQ
PQUKI
PRINS
ADTOC
UNPAY
DOA
DOI 10.3390/jlpea12030044
DatabaseName CrossRef
Electronics & Communications Abstracts
Technology Research Database
ProQuest SciTech Collection
ProQuest Technology Collection
ProQuest Central (Alumni)
ProQuest Central UK/Ireland
Advanced Technologies & Computer Science Collection
ProQuest Central Essentials
ProQuest Central
Technology Collection
ProQuest One Community College
ProQuest Central Korea
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
SciTech Premium Collection
Advanced Technologies Database with Aerospace
Advanced Technologies & Aerospace Database
ProQuest Advanced Technologies & Aerospace Collection
ProQuest Central Premium
ProQuest One Academic
Publicly Available Content Database
ProQuest One Academic Middle East (New)
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Applied & Life Sciences
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
Unpaywall for CDI: Periodical Content
Unpaywall
Directory of Open Access Journals
DatabaseTitle CrossRef
Publicly Available Content Database
Technology Collection
Technology Research Database
ProQuest One Academic Middle East (New)
ProQuest Advanced Technologies & Aerospace Collection
ProQuest Central Essentials
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
ProQuest Central China
ProQuest Central
ProQuest One Applied & Life Sciences
ProQuest Central Korea
ProQuest Central (New)
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
Advanced Technologies & Aerospace Collection
ProQuest One Academic Eastern Edition
Electronics & Communications Abstracts
ProQuest Technology Collection
ProQuest SciTech Collection
Advanced Technologies & Aerospace Database
ProQuest One Academic UKI Edition
Engineering Research Database
ProQuest One Academic
ProQuest One Academic (New)
DatabaseTitleList
CrossRef
Publicly Available Content Database
Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
– sequence: 2
  dbid: UNPAY
  name: Unpaywall
  url: https://proxy.k.utb.cz/login?url=https://unpaywall.org/
  sourceTypes: Open Access Repository
– sequence: 3
  dbid: 8FG
  name: ProQuest Technology Collection
  url: https://search.proquest.com/technologycollection1
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2079-9268
ExternalDocumentID oai_doaj_org_article_9e6165bbdeb34c88a6192ad26a6e7294
10.3390/jlpea12030044
10_3390_jlpea12030044
GroupedDBID .4S
.DC
5VS
8FE
8FG
AADQD
AAYXX
ACIWK
ADBBV
ADMLS
AFKRA
AFZYC
ALMA_UNASSIGNED_HOLDINGS
ARAPS
ARCSS
BCNDV
BENPR
BGLVJ
CCPQU
CITATION
GROUPED_DOAJ
HCIFZ
IAO
ITC
KQ8
MK~
MODMG
M~E
OK1
P62
PHGZM
PHGZT
PIMPY
PQGLB
PROAC
TUS
7SP
8FD
ABUWG
AZQEC
DWQXO
F28
FR3
L7M
PKEHL
PQEST
PQQKQ
PQUKI
PRINS
ADTOC
IPNFZ
RIG
UNPAY
ID FETCH-LOGICAL-c370t-82078aa51537367ce82ef2a8976c955d0b22e7d9f4de424f17761708a03f44183
IEDL.DBID BENPR
ISSN 2079-9268
IngestDate Fri Oct 03 12:42:02 EDT 2025
Sun Oct 26 03:46:24 EDT 2025
Fri Jul 25 04:49:53 EDT 2025
Thu Oct 16 04:30:50 EDT 2025
Thu Apr 24 22:55:20 EDT 2025
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 3
Language English
License cc-by
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c370t-82078aa51537367ce82ef2a8976c955d0b22e7d9f4de424f17761708a03f44183
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ORCID 0000-0003-3129-602X
OpenAccessLink https://www.proquest.com/docview/2716553082?pq-origsite=%requestingapplication%&accountid=15518
PQID 2716553082
PQPubID 2032378
ParticipantIDs doaj_primary_oai_doaj_org_article_9e6165bbdeb34c88a6192ad26a6e7294
unpaywall_primary_10_3390_jlpea12030044
proquest_journals_2716553082
crossref_primary_10_3390_jlpea12030044
crossref_citationtrail_10_3390_jlpea12030044
PublicationCentury 2000
PublicationDate 2022-09-01
PublicationDateYYYYMMDD 2022-09-01
PublicationDate_xml – month: 09
  year: 2022
  text: 2022-09-01
  day: 01
PublicationDecade 2020
PublicationPlace Basel
PublicationPlace_xml – name: Basel
PublicationTitle Journal of low power electronics and applications
PublicationYear 2022
Publisher MDPI AG
Publisher_xml – name: MDPI AG
References ref_94
Eshraghian (ref_115) 2010; 19
Gaba (ref_111) 2013; 5
ref_92
Chua (ref_21) 2015; 24
Thomas (ref_130) 2013; 46
ref_13
Min (ref_159) 2021; 15
ref_96
Wang (ref_109) 2017; 16
ref_95
ref_134
Muthuswamy (ref_101) 2010; 20
Chua (ref_11) 1976; 64
ref_17
ref_16
ref_15
Pershin (ref_37) 2009; 97
Lu (ref_149) 2019; 2
Wuttig (ref_7) 2007; 6
Yakopcic (ref_128) 2018; 33
Biolek (ref_102) 2015; 1
ref_125
Wang (ref_154) 2019; 29
ref_127
Pershin (ref_41) 2011; 14
Pershin (ref_42) 2011; 8
ref_20
Pershin (ref_22) 2009; 97
Yu (ref_70) 2013; 22
ref_29
Mehonic (ref_91) 2020; 2
Isah (ref_106) 2020; 14
ref_26
(ref_99) 2014; 61
Takahashi (ref_71) 2015; 12
Borghetti (ref_122) 2010; 464
Zhang (ref_80) 2021; 66
Yao (ref_148) 2020; 577
Xing (ref_1) 2010; 19
ref_72
Zidan (ref_79) 2018; 1
Jo (ref_58) 2010; 10
ref_158
Abraham (ref_19) 2018; 8
Prodromakis (ref_63) 2011; 58
Chua (ref_10) 1971; 18
Yin (ref_38) 2015; 62
ref_76
Pershin (ref_57) 2008; 78
ref_157
ref_156
Minayi (ref_123) 2013; 55
Wang (ref_137) 2016; 6
Dongale (ref_139) 2018; 13
Kim (ref_110) 2012; 12
Hu (ref_53) 2013; 102
Sagar (ref_153) 2022; 12
Chua (ref_27) 2014; 29
Prezioso (ref_84) 2015; 521
Hu (ref_116) 2014; 6
Prezioso (ref_136) 2016; 6
Seitz (ref_2) 1997; 388
ref_82
Sebastian (ref_87) 2020; 15
Hu (ref_83) 2018; 30
ref_140
Anusudha (ref_68) 2018; 90
Shin (ref_121) 2010; 10
Pershin (ref_45) 2019; 34
ref_142
Singh (ref_74) 2019; 18
ref_141
Gelencser (ref_24) 2012; 85
Chua (ref_28) 2011; 102
Duan (ref_129) 2014; 26
Boyn (ref_135) 2017; 8
ref_144
ref_143
ref_146
Li (ref_151) 2018; 554
ref_145
Isah (ref_23) 2021; 2
Kato (ref_8) 2005; 44
Vongehr (ref_18) 2015; 5
Biolek (ref_32) 2011; 47
Kim (ref_52) 2012; 12
Feng (ref_152) 2021; 15
Biolek (ref_34) 2012; 59
Adam (ref_108) 2016; 64
Cheng (ref_88) 2020; 6
Kvatinsky (ref_67) 2012; 60
Pershin (ref_43) 2011; 100
Kvatinsky (ref_93) 2015; 62
Yang (ref_155) 2019; 57
Chanthbouala (ref_51) 2012; 11
Li (ref_138) 2014; 4
Isah (ref_107) 2020; 56
Xu (ref_119) 2016; 65
Markin (ref_31) 2014; 9
Hutchinson (ref_124) 1988; 21
Lalchhandama (ref_90) 2022; 126
Adhikari (ref_25) 2013; 60
Fitch (ref_100) 2012; 21
ref_60
Murali (ref_59) 2013; 79
Biolek (ref_35) 2013; 22
ref_69
Clauss (ref_30) 2001; 22
Cohen (ref_40) 2012; 85
Pershin (ref_120) 2010; 57
Lin (ref_5) 2014; 103
Adhikari (ref_131) 2012; 23
Sangwan (ref_150) 2018; 554
Slipko (ref_64) 2019; 68
Lin (ref_89) 2021; 6
Johnsen (ref_14) 2012; 3
ref_114
Lee (ref_81) 2019; 52
ref_117
Cserey (ref_97) 2010; 29
Chu (ref_126) 2014; 62
Mayr (ref_133) 2015; 9
Sun (ref_77) 2021; 31
Bodo (ref_104) 2018; 115
ref_113
Kim (ref_132) 2011; 100
Strukov (ref_12) 2008; 453
Biolek (ref_36) 2014; 50
Kim (ref_46) 2020; 6
Ielmini (ref_86) 2018; 1
Wang (ref_56) 2009; 30
Liu (ref_147) 2020; 6
ref_39
Erokhin (ref_54) 2005; 97
Biolek (ref_66) 2009; 18
Georgiou (ref_75) 2016; 44
Fouda (ref_105) 2016; 33
Li (ref_78) 2018; 51
ref_47
Wang (ref_85) 2020; 5
Kim (ref_103) 2012; 59
ref_44
Hu (ref_61) 2012; 55
Campbell (ref_33) 2017; 59
Zha (ref_73) 2015; 63
Joglekar (ref_62) 2009; 30
Pershin (ref_9) 2011; 60
ref_3
Chen (ref_55) 2014; 1
Pershin (ref_50) 2018; 52
ref_49
ref_48
Duan (ref_118) 2012; 55
Benderli (ref_65) 2009; 45
ref_4
Mazumder (ref_112) 2012; 100
Valsa (ref_98) 2011; 24
ref_6
References_xml – volume: 102
  start-page: 765
  year: 2011
  ident: ref_28
  article-title: Resistance switching memories are memristors
  publication-title: Appl. Phys. A
  doi: 10.1007/s00339-011-6264-9
– volume: 64
  start-page: 312
  year: 2016
  ident: ref_108
  article-title: 3-D memristor crossbars for analog and neuromorphic computing applications
  publication-title: IEEE Trans. Electron. Devices
  doi: 10.1109/TED.2016.2630925
– volume: 6
  start-page: 824
  year: 2007
  ident: ref_7
  article-title: Phase-change materials for rewriteable data storage
  publication-title: Nat. Mater.
  doi: 10.1038/nmat2009
– volume: 5
  start-page: 5872
  year: 2013
  ident: ref_111
  article-title: Stochastic memristive devices for computing and neuromorphic applications
  publication-title: Nanoscale
  doi: 10.1039/c3nr01176c
– volume: 60
  start-page: 211
  year: 2012
  ident: ref_67
  article-title: TEAM: Threshold adaptive memristor model
  publication-title: IEEE Trans. Circuits Syst. Regul. Pap.
  doi: 10.1109/TCSI.2012.2215714
– volume: 464
  start-page: 873
  year: 2010
  ident: ref_122
  article-title: ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
  publication-title: Nature
  doi: 10.1038/nature08940
– volume: 18
  start-page: 210
  year: 2009
  ident: ref_66
  article-title: SPICE Model of Memristor with Nonlinear Dopant Drift
  publication-title: Radioengineering
– ident: ref_113
  doi: 10.1109/ICECS.2010.5724666
– volume: 59
  start-page: 607
  year: 2012
  ident: ref_34
  article-title: Computation of the area of memristor pinched hysteresis loop
  publication-title: IEEE Trans. Circuits Syst. II Express Briefs
– ident: ref_44
  doi: 10.1007/978-94-007-4491-2_3
– volume: 22
  start-page: 969
  year: 2013
  ident: ref_70
  article-title: A memristor model with piecewise window function
  publication-title: Radioengineering
– volume: 5
  start-page: 173
  year: 2020
  ident: ref_85
  article-title: Resistive switching materials for information processing
  publication-title: Nat. Rev. Mater.
  doi: 10.1038/s41578-019-0159-3
– ident: ref_16
– ident: ref_39
– volume: 20
  start-page: 1335
  year: 2010
  ident: ref_101
  article-title: Implementing memristor based chaotic circuits
  publication-title: Int. J. Bifurc. Chaos
  doi: 10.1142/S0218127410026514
– volume: 29
  start-page: 1901106
  year: 2019
  ident: ref_154
  article-title: Artificial synapses based on multiterminal memtransistors for neuromorphic application
  publication-title: Adv. Funct. Mater.
  doi: 10.1002/adfm.201901106
– ident: ref_82
  doi: 10.3390/ma13040938
– volume: 14
  start-page: 584
  year: 2011
  ident: ref_41
  article-title: Memory materials: A unifying description
  publication-title: Mater. Today
  doi: 10.1016/S1369-7021(11)70299-1
– ident: ref_144
  doi: 10.3390/ma12213482
– volume: 24
  start-page: 319
  year: 2015
  ident: ref_21
  article-title: Everything you wish to know about memristors but are afraid to ask
  publication-title: Radioengineering
  doi: 10.13164/re.2015.0319
– ident: ref_94
– volume: 44
  start-page: 1685
  year: 2016
  ident: ref_75
  article-title: Window functions and sigmoidal behaviour of memristive systems
  publication-title: Int. J. Circuit Theory Appl.
  doi: 10.1002/cta.2186
– ident: ref_158
  doi: 10.1109/ULTSYM.2016.7728885
– ident: ref_69
  doi: 10.1109/EEEI.2012.6377081
– volume: 18
  start-page: 640
  year: 2019
  ident: ref_74
  article-title: An accurate and generic window function for nonlinear memristor models
  publication-title: J. Comput. Electron.
  doi: 10.1007/s10825-019-01306-6
– volume: 59
  start-page: 2422
  year: 2012
  ident: ref_103
  article-title: Memristor emulator for memristor circuit applications
  publication-title: IEEE Trans. Circuits Syst. Regul. Pap.
  doi: 10.1109/TCSI.2012.2188957
– volume: 24
  start-page: 400
  year: 2011
  ident: ref_98
  article-title: An analogue model of the memristor
  publication-title: Int. J. Numer. Model. Electron. Netw. Devices Fields
  doi: 10.1002/jnm.786
– ident: ref_114
– volume: 21
  start-page: 52
  year: 1988
  ident: ref_124
  article-title: Computing motion using analog and binary resistive networks
  publication-title: Computer
  doi: 10.1109/2.31
– ident: ref_4
– volume: 19
  start-page: 1407
  year: 2010
  ident: ref_115
  article-title: Memristor MOS content addressable memory (MCAM): Hybrid architecture for future high performance search engines
  publication-title: IEEE Trans. Very Large Scale Integr. (VLSI) Syst.
  doi: 10.1109/TVLSI.2010.2049867
– volume: 8
  start-page: 10972
  year: 2018
  ident: ref_19
  article-title: The case for rejecting the memristor as a fundamental circuit element
  publication-title: Sci. Rep.
  doi: 10.1038/s41598-018-29394-7
– ident: ref_48
– volume: 1
  start-page: 489
  year: 2014
  ident: ref_55
  article-title: Polymer memristor for information storage and neuromorphic applications
  publication-title: Mater. Horizons
  doi: 10.1039/C4MH00067F
– volume: 4
  start-page: 4906
  year: 2014
  ident: ref_138
  article-title: Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems
  publication-title: Sci. Rep.
  doi: 10.1038/srep04906
– ident: ref_146
  doi: 10.3390/ma12142260
– volume: 44
  start-page: 7340
  year: 2005
  ident: ref_8
  article-title: Electronic properties of amorphous and crystalline Ge2Sb2Te5 films
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.44.7340
– volume: 12
  start-page: 3808
  year: 2022
  ident: ref_153
  article-title: Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing
  publication-title: Sci. Rep.
  doi: 10.1038/s41598-022-07505-9
– volume: 15
  start-page: 529
  year: 2020
  ident: ref_87
  article-title: Memory devices and applications for in-memory computing
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/s41565-020-0655-z
– volume: 65
  start-page: 120503
  year: 2016
  ident: ref_119
  article-title: A memristor-based chaotic system and its field programmable gate array implementation
  publication-title: Acta Phys. Sin.
  doi: 10.7498/aps.65.120503
– volume: 6
  start-page: 21331
  year: 2016
  ident: ref_136
  article-title: Self-adaptive spike-time-dependent plasticity of metal-oxide memristors
  publication-title: Sci. Rep.
  doi: 10.1038/srep21331
– ident: ref_13
– volume: 102
  start-page: 102901
  year: 2013
  ident: ref_53
  article-title: Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4795145
– volume: 6
  start-page: 2100745
  year: 2021
  ident: ref_89
  article-title: Implementation of Highly Reliable and Energy Efficient in-Memory Hamming Distance Computations in 1 Kb 1-Transistor-1-Memristor Arrays
  publication-title: Adv. Mater. Technol.
  doi: 10.1002/admt.202100745
– volume: 10
  start-page: 266
  year: 2010
  ident: ref_121
  article-title: Memristor applications for programmable analog ICs
  publication-title: IEEE Trans. Nanotechnol.
  doi: 10.1109/TNANO.2009.2038610
– volume: 52
  start-page: 964
  year: 2019
  ident: ref_81
  article-title: Organic synapses for neuromorphic electronics: From brain-inspired computing to sensorimotor nervetronics
  publication-title: Acc. Chem. Res.
  doi: 10.1021/acs.accounts.8b00553
– volume: 45
  start-page: 377
  year: 2009
  ident: ref_65
  article-title: On SPICE macromodelling of TiO2 memristors
  publication-title: Electron. Lett.
  doi: 10.1049/el.2009.3511
– volume: 29
  start-page: 632
  year: 2010
  ident: ref_97
  article-title: Macromodeling of the memristor in SPICE
  publication-title: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
  doi: 10.1109/TCAD.2010.2042900
– volume: 29
  start-page: 104001
  year: 2014
  ident: ref_27
  article-title: If it’s pinched it’sa memristor
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/29/10/104001
– volume: 51
  start-page: 503002
  year: 2018
  ident: ref_78
  article-title: Review of memristor devices in neuromorphic computing: Materials sciences and device challenges
  publication-title: J. Phys. Appl. Phys.
  doi: 10.1088/1361-6463/aade3f
– ident: ref_6
  doi: 10.1142/9789814434805_0041
– ident: ref_47
– volume: 8
  start-page: 14736
  year: 2017
  ident: ref_135
  article-title: Learning through ferroelectric domain dynamics in solid-state synapses
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms14736
– volume: 66
  start-page: 1624
  year: 2021
  ident: ref_80
  article-title: Hybrid memristor-CMOS neurons for in situ learning in fully hardware memristive spiking neural networks
  publication-title: Sci. Bull.
  doi: 10.1016/j.scib.2021.04.014
– volume: 2
  start-page: 2000085
  year: 2020
  ident: ref_91
  article-title: Memristors—From In-Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio-Inspired Computing
  publication-title: Adv. Intell. Syst.
  doi: 10.1002/aisy.202000085
– volume: 15
  start-page: 1764
  year: 2021
  ident: ref_152
  article-title: Self-selective multi-terminal memtransistor crossbar array for in-memory computing
  publication-title: ACS Nano
  doi: 10.1021/acsnano.0c09441
– volume: 97
  start-page: 1717
  year: 2009
  ident: ref_37
  article-title: Circuit elements with memory: Memristors, memcapacitors, and meminductors
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2009.2021077
– volume: 62
  start-page: 2410
  year: 2014
  ident: ref_126
  article-title: Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron
  publication-title: IEEE Trans. Ind. Electron.
  doi: 10.1109/TIE.2014.2356439
– ident: ref_92
– volume: 1
  start-page: 333
  year: 2018
  ident: ref_86
  article-title: In-memory computing with resistive switching devices
  publication-title: Nat. Electron.
  doi: 10.1038/s41928-018-0092-2
– volume: 60
  start-page: 3008
  year: 2013
  ident: ref_25
  article-title: Three fingerprints of memristor
  publication-title: IEEE Trans. Circuits Syst. Regul. Pap.
  doi: 10.1109/TCSI.2013.2256171
– ident: ref_95
  doi: 10.1109/ECCTD.2009.5274934
– volume: 33
  start-page: 408
  year: 2018
  ident: ref_128
  article-title: Flexible memristor based neuromorphic system for implementing multi-layer neural network algorithms
  publication-title: Int. J. Parallel Emergent Distrib. Syst.
  doi: 10.1080/17445760.2017.1321761
– volume: 30
  start-page: 294
  year: 2009
  ident: ref_56
  article-title: Spintronic memristor through spin-torque-induced magnetization motion
  publication-title: IEEE Electron. Device Lett.
  doi: 10.1109/LED.2008.2012270
– volume: 64
  start-page: 209
  year: 1976
  ident: ref_11
  article-title: Memristive devices and systems
  publication-title: Proc. IEEE
  doi: 10.1109/PROC.1976.10092
– ident: ref_142
  doi: 10.3390/ma11112102
– volume: 6
  start-page: 22970
  year: 2016
  ident: ref_137
  article-title: Investigation and manipulation of different analog behaviors of memristor as electronic synapse for neuromorphic applications
  publication-title: Sci. Rep.
  doi: 10.1038/srep22970
– volume: 97
  start-page: 064501
  year: 2005
  ident: ref_54
  article-title: Hybrid electronic device based on polyaniline-polyethyleneoxide junction
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1861508
– ident: ref_26
  doi: 10.1109/ISCAS.2013.6571817
– volume: 30
  start-page: 1705914
  year: 2018
  ident: ref_83
  article-title: Memristor-based analog computation and neural network classification with a dot product engine
  publication-title: Adv. Mater.
  doi: 10.1002/adma.201705914
– ident: ref_134
  doi: 10.1109/ISCAS.2014.6865448
– volume: 12
  start-page: 5697
  year: 2012
  ident: ref_52
  article-title: Ferroelectric tunnel memristor
  publication-title: Nano Lett.
  doi: 10.1021/nl302912t
– volume: 19
  start-page: 3
  year: 2010
  ident: ref_1
  article-title: The Contemporary IT Transformations
  publication-title: Proc. Northeast. Bus. Econ. Assoc.
– volume: 126
  start-page: 102480
  year: 2022
  ident: ref_90
  article-title: CoMIC: Complementary Memristor based in-memory computing in 3D architecture
  publication-title: J. Syst. Archit.
  doi: 10.1016/j.sysarc.2022.102480
– volume: 31
  start-page: 2006773
  year: 2021
  ident: ref_77
  article-title: The future of memristors: Materials engineering and neural networks
  publication-title: Adv. Funct. Mater.
  doi: 10.1002/adfm.202006773
– volume: 60
  start-page: 145
  year: 2011
  ident: ref_9
  article-title: Memory effects in complex materials and nanoscale systems
  publication-title: Adv. Phys.
  doi: 10.1080/00018732.2010.544961
– volume: 2
  start-page: 647528
  year: 2021
  ident: ref_23
  article-title: Polarity Reversal Effect of a Memristor From the Circuit Point of View and Insights Into the Memristor Fuse
  publication-title: Front. Comms. Netw.
  doi: 10.3389/frcmn.2021.647528
– volume: 12
  start-page: 20150149
  year: 2015
  ident: ref_71
  article-title: SPICE model of memristive device using Tukey window function
  publication-title: IEICE Electron. Express
  doi: 10.1587/elex.12.20150149
– volume: 79
  start-page: 248
  year: 2013
  ident: ref_59
  article-title: Resistive switching in zinc–tin-oxide
  publication-title: Solid-State Electron.
  doi: 10.1016/j.sse.2012.06.016
– volume: 56
  start-page: 211
  year: 2020
  ident: ref_107
  article-title: Dynamics of a charge-controlled memristor in master–slave coupling
  publication-title: Electron. Lett.
  doi: 10.1049/el.2019.3322
– volume: 23
  start-page: 1426
  year: 2012
  ident: ref_131
  article-title: Memristor bridge synapse-based neural network and its learning
  publication-title: IEEE Trans. Neural Netw. Learn. Syst.
  doi: 10.1109/TNNLS.2012.2204770
– volume: 22
  start-page: 385
  year: 2001
  ident: ref_30
  article-title: Hysteresis in a light bulb: Connecting electricity and thermodynamics with simple experiments and simulations
  publication-title: Eur. J. Phys.
  doi: 10.1088/0143-0807/22/4/313
– ident: ref_117
  doi: 10.7873/DATE.2015.1136
– ident: ref_145
  doi: 10.3390/ma12203451
– volume: 57
  start-page: 1857
  year: 2010
  ident: ref_120
  article-title: Practical approach to programmable analog circuits with memristors
  publication-title: IEEE Trans. Circuits Syst. Regul. Pap.
  doi: 10.1109/TCSI.2009.2038539
– volume: 8
  start-page: 441
  year: 2011
  ident: ref_42
  article-title: Memory circuit elements: From systems to applications
  publication-title: J. Comput. Theor. Nanosci.
  doi: 10.1166/jctn.2011.1708
– volume: 61
  start-page: 309
  year: 2014
  ident: ref_99
  article-title: A floating analog memristor emulator circuit
  publication-title: IEEE Trans. Circuits Syst. II Express Briefs
– volume: 21
  start-page: 108501
  year: 2012
  ident: ref_100
  article-title: Implementation of an analogue model of a memristor based on a light-dependent resistor
  publication-title: Chin. Phys. B
  doi: 10.1088/1674-1056/21/10/108501
– volume: 3
  start-page: 20
  year: 2012
  ident: ref_14
  article-title: An introduction to the memristor-a valuable circuit element in bioelectricity and bioimpedance
  publication-title: J. Electr. Bioimpedance
  doi: 10.5617/jeb.305
– volume: 15
  start-page: 755405
  year: 2021
  ident: ref_159
  article-title: Memristor Computing for Neuromorphic Systems
  publication-title: Front. Comput. Neurosci.
  doi: 10.3389/fncom.2021.755405
– ident: ref_156
  doi: 10.3390/nano12020279
– volume: 14
  start-page: 427
  year: 2020
  ident: ref_106
  article-title: Memristor dynamics involved in cells communication for a 2D non-linear network
  publication-title: IET Signal Process.
  doi: 10.1049/iet-spr.2020.0136
– volume: 90
  start-page: 130
  year: 2018
  ident: ref_68
  article-title: A versatile window function for linear ion drift memristor model—A new approach
  publication-title: AEU-Int. J. Electron. Commun.
  doi: 10.1016/j.aeue.2018.04.020
– volume: 68
  start-page: 2167
  year: 2019
  ident: ref_64
  article-title: Importance of the window function choice for the predictive modelling of memristors
  publication-title: IEEE Trans. Circuits Syst. II Express Briefs
– volume: 22
  start-page: 132
  year: 2013
  ident: ref_35
  article-title: Analytical computation of the area of pinched hysteresis loops of ideal mem-elements
  publication-title: Radioengineering
– volume: 34
  start-page: 098001
  year: 2019
  ident: ref_45
  article-title: Comment on ‘If it’s pinched it’s a memristor’
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/1361-6641/ab3584
– volume: 115
  start-page: 190
  year: 2018
  ident: ref_104
  article-title: Experimental hysteresis in memristor based Duffing oscillator
  publication-title: Chaos Solitons Fractals
  doi: 10.1016/j.chaos.2018.08.030
– volume: 103
  start-page: 131
  year: 2014
  ident: ref_5
  article-title: The first human-made memristor: Circa 1801 [scanning our past]
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2014.2374754
– volume: 9
  start-page: 51
  year: 2015
  ident: ref_133
  article-title: Plasticity in memristive devices for spiking neural networks
  publication-title: Front. Neurosci.
– volume: 57
  start-page: 566
  year: 2019
  ident: ref_155
  article-title: Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications
  publication-title: Nano Energy
  doi: 10.1016/j.nanoen.2018.12.057
– volume: 47
  start-page: 1385
  year: 2011
  ident: ref_32
  article-title: Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
  publication-title: Electron. Lett.
  doi: 10.1049/el.2011.2913
– volume: 63
  start-page: 423
  year: 2015
  ident: ref_73
  article-title: A novel window function for memristor model with application in programming analog circuits
  publication-title: IEEE Trans. Circuits Syst. II Express Briefs
– volume: 55
  start-page: 461
  year: 2012
  ident: ref_61
  article-title: Memristive crossbar array with applications in image processing
  publication-title: Sci. China Inf. Sci.
  doi: 10.1007/s11432-011-4410-9
– volume: 85
  start-page: 165428
  year: 2012
  ident: ref_40
  article-title: Lagrange formalism of memory circuit elements: Classical and quantum formulations
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.85.165428
– volume: 52
  start-page: 01LT01
  year: 2018
  ident: ref_50
  article-title: A simple test for ideal memristors
  publication-title: J. Phys. Appl. Phys.
  doi: 10.1088/1361-6463/aae680
– volume: 6
  start-page: 729
  year: 2014
  ident: ref_116
  article-title: Review of nanostructured resistive switching memristor and its applications
  publication-title: Nanosci. Nanotechnol. Lett.
  doi: 10.1166/nnl.2014.1888
– volume: 50
  start-page: 74
  year: 2014
  ident: ref_36
  article-title: Interpreting area of pinched memristor hysteresis loop
  publication-title: Electron. Lett.
  doi: 10.1049/el.2013.3108
– volume: 62
  start-page: 786
  year: 2015
  ident: ref_93
  article-title: VTEAM: A general model for voltage-controlled memristors
  publication-title: IEEE Trans. Circuits Syst. II Express Briefs
– volume: 58
  start-page: 3099
  year: 2011
  ident: ref_63
  article-title: A versatile memristor model with nonlinear dopant kinetics
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2011.2158004
– volume: 6
  start-page: 2000457
  year: 2020
  ident: ref_88
  article-title: In-Memory Hamming Weight Calculation in a 1T1R Memristive Array
  publication-title: Adv. Electron. Mater.
  doi: 10.1002/aelm.202000457
– volume: 2
  start-page: 66
  year: 2019
  ident: ref_149
  article-title: An electronic silicon-based memristor with a high switching uniformity
  publication-title: Nat. Electron.
  doi: 10.1038/s41928-019-0204-7
– volume: 16
  start-page: 101
  year: 2017
  ident: ref_109
  article-title: Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
  publication-title: Nat. Mater.
  doi: 10.1038/nmat4756
– volume: 388
  start-page: 339
  year: 1997
  ident: ref_2
  article-title: On the trail of the transistor
  publication-title: Nature
  doi: 10.1038/41012
– volume: 453
  start-page: 80
  year: 2008
  ident: ref_12
  article-title: The missing memristor found
  publication-title: Nature
  doi: 10.1038/nature06932
– volume: 11
  start-page: 860
  year: 2012
  ident: ref_51
  article-title: A ferroelectric memristor
  publication-title: Nat. Mater.
  doi: 10.1038/nmat3415
– ident: ref_143
  doi: 10.3390/ma12213573
– volume: 554
  start-page: 500
  year: 2018
  ident: ref_150
  article-title: Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
  publication-title: Nature
  doi: 10.1038/nature25747
– ident: ref_17
– volume: 18
  start-page: 507
  year: 1971
  ident: ref_10
  article-title: Memristor-the missing circuit element
  publication-title: IEEE Trans. Circuit Theory
  doi: 10.1109/TCT.1971.1083337
– volume: 62
  start-page: 402
  year: 2015
  ident: ref_38
  article-title: What are memristor, memcapacitor, and meminductor?
  publication-title: IEEE Trans. Circuits Syst. II Express Briefs
– volume: 26
  start-page: 1202
  year: 2014
  ident: ref_129
  article-title: Memristor-based cellular nonlinear/neural network: Design, analysis, and applications
  publication-title: IEEE Trans. Neural Netw. Learn. Syst.
  doi: 10.1109/TNNLS.2014.2334701
– volume: 46
  start-page: 093001
  year: 2013
  ident: ref_130
  article-title: Memristor-based neural networks
  publication-title: J. Phys. Appl. Phys.
  doi: 10.1088/0022-3727/46/9/093001
– ident: ref_141
  doi: 10.3390/ma13010166
– ident: ref_20
– volume: 12
  start-page: 389
  year: 2012
  ident: ref_110
  article-title: A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications
  publication-title: Nano Lett.
  doi: 10.1021/nl203687n
– volume: 100
  start-page: 2071
  year: 2011
  ident: ref_43
  article-title: Neuromorphic, digital, and quantum computation with memory circuit elements
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2011.2166369
– volume: 10
  start-page: 1297
  year: 2010
  ident: ref_58
  article-title: Nanoscale memristor device as synapse in neuromorphic systems
  publication-title: Nano Lett.
  doi: 10.1021/nl904092h
– volume: 30
  start-page: 661
  year: 2009
  ident: ref_62
  article-title: The elusive memristor: Properties of basic electrical circuits
  publication-title: Eur. J. Phys.
  doi: 10.1088/0143-0807/30/4/001
– ident: ref_125
  doi: 10.1038/npre.2009.3010.1
– volume: 9
  start-page: e972887
  year: 2014
  ident: ref_31
  article-title: An analytical model of memristors in plants
  publication-title: Plant Signal. Behav.
  doi: 10.4161/15592316.2014.972887
– volume: 521
  start-page: 61
  year: 2015
  ident: ref_84
  article-title: Training and operation of an integrated neuromorphic network based on metal-oxide memristors
  publication-title: Nature
  doi: 10.1038/nature14441
– volume: 78
  start-page: 113309
  year: 2008
  ident: ref_57
  article-title: Spin memristive systems: Spin memory effects in semiconductor spintronics
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.78.113309
– volume: 100
  start-page: 1911
  year: 2012
  ident: ref_112
  article-title: Memristors: Devices, models, and applications
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2012.2190812
– volume: 6
  start-page: 2000010
  year: 2020
  ident: ref_46
  article-title: An Experimental Proof that Resistance-Switching Memory Cells are not Memristors
  publication-title: Adv. Electron. Mater.
  doi: 10.1002/aelm.202000010
– volume: 59
  start-page: 10
  year: 2017
  ident: ref_33
  article-title: Self-directed channel memristor for high temperature operation
  publication-title: Microelectron. J.
  doi: 10.1016/j.mejo.2016.11.006
– volume: 1
  start-page: 22
  year: 2018
  ident: ref_79
  article-title: The future of electronics based on memristive systems
  publication-title: Nat. Electron.
  doi: 10.1038/s41928-017-0006-8
– volume: 55
  start-page: 304
  year: 2013
  ident: ref_123
  article-title: New memristor applications: AM, ASK, FSK, and BPSK modulators
  publication-title: IEEE Antennas Propag. Mag.
  doi: 10.1109/MAP.2013.6529381
– volume: 55
  start-page: 1446
  year: 2012
  ident: ref_118
  article-title: Memristor-based RRAM with applications
  publication-title: Sci. China Inf. Sci.
  doi: 10.1007/s11432-012-4572-0
– ident: ref_127
  doi: 10.1109/NANOARCH.2008.4585796
– ident: ref_72
  doi: 10.1109/FUZZ-IEEE.2015.7338105
– ident: ref_76
  doi: 10.3390/electronics10131577
– ident: ref_49
  doi: 10.1155/2018/1747865
– ident: ref_3
  doi: 10.1142/9789814434805_0038
– volume: 1
  start-page: 112
  year: 2015
  ident: ref_102
  article-title: Passive fully floating emulator of memristive device for laboratory experiments
  publication-title: Adv. Electr. Comput. Eng.
– ident: ref_29
– volume: 13
  start-page: 68
  year: 2018
  ident: ref_139
  article-title: An electronic synapse device based on TiO2 thin film memristor
  publication-title: J. Nanoelectron. Optoelectron.
  doi: 10.1166/jno.2018.2297
– ident: ref_140
  doi: 10.3390/ma12172745
– ident: ref_15
– volume: 5
  start-page: 11657
  year: 2015
  ident: ref_18
  article-title: The missing memristor has not been found
  publication-title: Sci. Rep.
  doi: 10.1038/srep11657
– volume: 85
  start-page: 041918
  year: 2012
  ident: ref_24
  article-title: Biomimetic model of the outer plexiform layer by incorporating memristive devices
  publication-title: Phys. Rev. E
  doi: 10.1103/PhysRevE.85.041918
– ident: ref_96
  doi: 10.1109/MWSCAS.2010.5548670
– ident: ref_157
  doi: 10.1109/BEC.2018.8600977
– ident: ref_60
– volume: 100
  start-page: 2061
  year: 2011
  ident: ref_132
  article-title: Memristor bridge synapses
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2011.2166749
– volume: 6
  start-page: eabc4797
  year: 2020
  ident: ref_147
  article-title: Multichannel parallel processing of neural signals in memristor arrays
  publication-title: Sci. Adv.
  doi: 10.1126/sciadv.abc4797
– volume: 554
  start-page: 472
  year: 2018
  ident: ref_151
  article-title: Neurons mimicked by electronics
  publication-title: Nature
  doi: 10.1038/d41586-018-02025-x
– volume: 577
  start-page: 641
  year: 2020
  ident: ref_148
  article-title: Fully hardware-implemented memristor convolutional neural network
  publication-title: Nature
  doi: 10.1038/s41586-020-1942-4
– volume: 97
  start-page: 1371
  year: 2009
  ident: ref_22
  article-title: Putting memory into circuit elements: Memristors, memcapacitors, and meminductors [point of view]
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2009.2022882
– volume: 33
  start-page: 259
  year: 2016
  ident: ref_105
  article-title: Experimental chaos detection in the Duffing oscillator
  publication-title: Commun. Nonlinear Sci. Numer. Simul.
  doi: 10.1016/j.cnsns.2015.09.011
SSID ssj0000913843
Score 2.3967075
SecondaryResourceType review_article
Snippet Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor...
SourceID doaj
unpaywall
proquest
crossref
SourceType Open Website
Open Access Repository
Aggregation Database
Enrichment Source
Index Database
StartPage 44
SubjectTerms analysis
argumentation
Capacitors
circuit elements
circuit variables
Circuits
Design
Electronic components
Magnetic flux
memristor
Memristors
Resistors
technology
Technology assessment
Transistors
SummonAdditionalLinks – databaseName: Directory of Open Access Journals
  dbid: DOA
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrZ3PS8MwFMeD7KIexJ9YnZKD6GVlaZKmqbdtbAxhnhzsVtImxUntxtYh_vcmaTfbg3rxWlIIL6993_f6-nkA3CV2orHyXSVi36VMei7nlLuME0kkEiiUpg45eWbjKX2a-bPaqC_TE1bigUvDdUPFPObHsdRZH004F0bxC4mZYEoLQ0sCRTysJVP2HRx6hFNSQjWJzuu7b9lSCQ8jQ5iijSBkWf0Ngbm_yZfi80NkWS3WjI7BUSUSYa_c3AnYU_kpOKyhA8_Aa1nUh4scagkH-0JbGw7mq2QzL-Cw7AlfQ5FLOFHvlh-wgs0Gw0e4BZJ04HeB3d7Sq33VPgfT0fBlMHarqQluQgJUuDqkB1wIrVNIQFiQKI5VigXXuiMJfV-iGGMVyDClUlFMUy8IDJSdC0RSrY04uQCtfJGrSwA5UrEWGDoJDH2qcBgLxGIsU5l6hmEsHdDZmjFKKqS4mWyRRTq1MFaPGlZ3wP1u-bJkafy0sG_OZLfIILDtBe0YUeUY0V-O4YD29kSj6rlcR1inh2ZQEscOeNid8u-7ufqP3VyDA2x-nLDdaW3QKlYbdaPlTBHfWs_9Akjk8aA
  priority: 102
  providerName: Directory of Open Access Journals
– databaseName: Unpaywall
  dbid: UNPAY
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1BT9swFLZQOQAHNgZoZYB8QONCiGM7jsMFFQRCSKAdVglOkR070K1LqzbdtP16nhO3a5FAiGv0HCV6z_b3OS_fh9BBXjsa2ziwSscBFyYKpOQyEJIZZogiqXHnkDe34qrLr-_iO9-bM_ZtlUDFe_UiTUmSBikVMoxoyELOw6EpTn_7g6QINkvp_LthBV4WMUDxFlru3n7r3DtDuenQRleTAbUPf_SHVkWUOJEpvrAP1XL9CxhzZVIO1d8_qt-f224uPzSequNapdB1mfw8nlT6OP_3TMPx3W_yEa17IIo7TeVsoCVbfkJrc_KEm-ix-XCAByUGmIjPFGQUn_dG-aRX4Yum73yMVWnwjf1VaxSM8GIT4wmeip4c4f-H-PWQztyX8y3Uvbz4fn4VeGeGIGcJqQKADYlUCrAQS5hIciupLaiSgG3yNI4N0ZTaxKQFN5ZTXkRJ4oTfpSKsAPwl2TZqlYPSfkZYEqsBxADRTGNuaaoVEZqawhSR00k2bXQ0zVOWe9ly557Rz4C-uLRmC2lto6-z8GGj1_FS4JlL-izIyWzXFwajh8zP2iy1IhKx1sZqxnMplaObylChhAVWAjfZnZZM5uf-OKNAQZ0Zk6RtdDgro9efZufNkV_QKnV_YNRtbruoVY0mdg9wUaX3ffU_AWjPBwE
  priority: 102
  providerName: Unpaywall
Title Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications
URI https://www.proquest.com/docview/2716553082
https://www.mdpi.com/2079-9268/12/3/44/pdf?version=1663817142
https://doaj.org/article/9e6165bbdeb34c88a6192ad26a6e7294
UnpaywallVersion publishedVersion
Volume 12
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVAFT
  databaseName: Open Access Digital Library
  customDbUrl:
  eissn: 2079-9268
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0000913843
  issn: 2079-9268
  databaseCode: KQ8
  dateStart: 20110101
  isFulltext: true
  titleUrlDefault: http://grweb.coalliance.org/oadl/oadl.html
  providerName: Colorado Alliance of Research Libraries
– providerCode: PRVAON
  databaseName: DOAJ Directory of Open Access Journals
  customDbUrl:
  eissn: 2079-9268
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0000913843
  issn: 2079-9268
  databaseCode: DOA
  dateStart: 20110101
  isFulltext: true
  titleUrlDefault: https://www.doaj.org/
  providerName: Directory of Open Access Journals
– providerCode: PRVEBS
  databaseName: Inspec with Full Text
  customDbUrl:
  eissn: 2079-9268
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0000913843
  issn: 2079-9268
  databaseCode: ADMLS
  dateStart: 20111001
  isFulltext: true
  titleUrlDefault: https://www.ebsco.com/products/research-databases/inspec-full-text
  providerName: EBSCOhost
– providerCode: PRVHPJ
  databaseName: ROAD: Directory of Open Access Scholarly Resources
  customDbUrl:
  eissn: 2079-9268
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0000913843
  issn: 2079-9268
  databaseCode: M~E
  dateStart: 20110101
  isFulltext: true
  titleUrlDefault: https://road.issn.org
  providerName: ISSN International Centre
– providerCode: PRVPQU
  databaseName: ProQuest Central
  customDbUrl: http://www.proquest.com/pqcentral?accountid=15518
  eissn: 2079-9268
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0000913843
  issn: 2079-9268
  databaseCode: BENPR
  dateStart: 20110301
  isFulltext: true
  titleUrlDefault: https://www.proquest.com/central
  providerName: ProQuest
– providerCode: PRVPQU
  databaseName: ProQuest Technology Collection
  customDbUrl:
  eissn: 2079-9268
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0000913843
  issn: 2079-9268
  databaseCode: 8FG
  dateStart: 20110301
  isFulltext: true
  titleUrlDefault: https://search.proquest.com/technologycollection1
  providerName: ProQuest
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1BT9swFH4q5TA4TIwNUQaVD2hcGpHaTuIgTVOLWqpJVAhRqTtFduxsRSUtpdW0f4-fk5T2MI6JHCvye7a_9_z8fQDnqVM0NoFnpAo8Huq2JwQXXiiYZtqXfqwxD3k7DAcj_nMcjGswrO7CYFlltSa6hVrPUsyRX1IL7FHiRtAf82cPVaPwdLWS0JCltIL-7ijGdmCXIjNWHXa7veHd_TrrgiyYgrOCbJPZeP_ycTo3sk19ZJ7iW5uT4_DfAp4fVvlc_vsrp9ONPah_AB9L8Eg6hbU_Qc3kh7C_QSn4Gf4UyX4yy4mFdqQrrRXI9WSRriZL0itqxV-IzDW5NU-OV2BBtgsPr0hFVNIib4l390ln47T7C4z6vYfrgVeqKXgpi_ylZ7f6SEhp8QuLWBilRlCTUSksHknjINC-otREOs64NpzyrB1FSNYupM8yi5kEO4J6PsvNMRDhG2WBhw0O44AbGivph4rqTGdt5DbWDWhVw5ikJdU4Kl5MExty4KgnW6PegG_r5vOCY-N_Dbtok3UjpMZ2L2aL30k505LYhNZTlNJGMZ4KITFElJqGMjQ2krCdnFYWTcr5-pK8eVcDLtZWfv9vTt7v6CvsUbwq4erRTqG-XKzMmQUwS9WEHdG_aZa-2XRpAPs0Gt51fr0Cv0Ly_A
linkProvider ProQuest
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1LTxsxEB5RONAeqj7VUNr60MeFFY7t3fVWQhWhQaGQqKpA4rbY69kWlG7SPIT4c_1tHe8jJIdy47ryWtbM2PPw-PsA3mclozGGARobBipy7UBrpYNISycdNzxxvg7ZH0S9M_XtPDxfg7_NWxjfVtmcieVB7UaZr5HvCgrsPcWNFl_GfwLPGuVvVxsKDVNTK7i9EmKsfthxjDfXlMJN946-kr4_CHHYPT3oBTXLQJDJmM8CcoGxNob8uoxlFGeoBebCaPLTWRKGjlshMHZJrhwqofJ2HHsQc224zCmW0JLmfQAbSqqEkr-NTnfw_ceiyuNRN7WSFbinlAnfvRqO0bQF90hXasUZlpwBK4Hu5rwYm5trMxwu-bzDJ_C4DlbZfmVdT2ENi2fwaAnC8Dn8qi4X2KhgFEqyjiGts4PLSTa_nLFu1Zs-ZaZwrI-_SxyDCVttdPzMGmCUHXZb6C9_2V-6XX8BZ_ci15ewXowKfAVMc7QU6FAymoQKRWINj6xwucvbHkvZtWCnEWOa1dDmnmFjmFKK46Werki9BR8Xw8cVpsf_Bna8ThaDPBR3-WE0-ZnWOztNMCLLtNahlSrT2viU1DgRmQgpc6FJthuNpvX5ME1vrbkFnxZavns1W3dP9A42e6f9k_TkaHD8Gh4K_0yj7IXbhvXZZI5vKHia2be1hTK4uO9N8Q8sSSok
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1LT9wwEB5RKrVwQH2KpTx8oO2FaL22kzhIVcVry6OgHorELbVjp6XaZrf7EOKv9dd1Jo9l9wA3rpFjWTNjzzfj8TcA21nZ0diHgTc2DFTkOoHWSgeRlk46bnjiKA95fhEdX6rTq_BqAf41b2GorLI5E8uD2vUzypG3BQJ7anGjRTuvyyK-HXY_D_4G1EGKblqbdhqViZz52xsM30afTg5R1--F6B59PzgO6g4DQSZjPg7Q_cXaGPTpMpZRnHktfC6MRh-dJWHouBXCxy7JlfNKqLwTx0Rgrg2XOeIILXHeJ_A0JhZ3eqXe_TLN7xDfplayovWUMuHt372BNx3BieNKzbnBslvAHMR9PikG5vbG9Hoz3q77AlZqmMr2Krt6CQu-eAXLM-SFr-FXda3A-gVDEMn2DeqbHVwPs8n1mB1VVekjZgrHzv2fksFgyOZLHHdZQ4myw-5S_OUvezP36m_g8lGk-hYWi37hV4Fp7i1CHAxDk1B5kVjDIytc7vIOsSi7Fuw0YkyzmtScemv0UgxuSOrpnNRb8GE6fFCxedw3cJ90Mh1EJNzlh_7wZ1rv6TTxEdqktc5bqTKtDQWjxonIRB5jFpxkvdFoWp8Mo_TOjlvwcarlh1ez9vBEW_AMt0L69eTi7B0sCXqfURbBrcPieDjxG4iaxnazNE8GPx57P_wH_fMnvg
linkToUnpaywall http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1BT9swFLZQOQAHNgZoZYB8QONCiGM7jsMFFQRCSKAdVglOkR070K1LqzbdtP16nhO3a5FAiGv0HCV6z_b3OS_fh9BBXjsa2ziwSscBFyYKpOQyEJIZZogiqXHnkDe34qrLr-_iO9-bM_ZtlUDFe_UiTUmSBikVMoxoyELOw6EpTn_7g6QINkvp_LthBV4WMUDxFlru3n7r3DtDuenQRleTAbUPf_SHVkWUOJEpvrAP1XL9CxhzZVIO1d8_qt-f224uPzSequNapdB1mfw8nlT6OP_3TMPx3W_yEa17IIo7TeVsoCVbfkJrc_KEm-ix-XCAByUGmIjPFGQUn_dG-aRX4Yum73yMVWnwjf1VaxSM8GIT4wmeip4c4f-H-PWQztyX8y3Uvbz4fn4VeGeGIGcJqQKADYlUCrAQS5hIciupLaiSgG3yNI4N0ZTaxKQFN5ZTXkRJ4oTfpSKsAPwl2TZqlYPSfkZYEqsBxADRTGNuaaoVEZqawhSR00k2bXQ0zVOWe9ly557Rz4C-uLRmC2lto6-z8GGj1_FS4JlL-izIyWzXFwajh8zP2iy1IhKx1sZqxnMplaObylChhAVWAjfZnZZM5uf-OKNAQZ0Zk6RtdDgro9efZufNkV_QKnV_YNRtbruoVY0mdg9wUaX3ffU_AWjPBwE
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Review+on+the+Basic+Circuit+Elements+and+Memristor+Interpretation%3A+Analysis%2C+Technology+and+Applications&rft.jtitle=Journal+of+low+power+electronics+and+applications&rft.au=Isah%2C+Aliyu&rft.au=Bilbault%2C+Jean-Marie&rft.date=2022-09-01&rft.issn=2079-9268&rft.eissn=2079-9268&rft.volume=12&rft.issue=3&rft.spage=44&rft_id=info:doi/10.3390%2Fjlpea12030044&rft.externalDBID=n%2Fa&rft.externalDocID=10_3390_jlpea12030044
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2079-9268&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2079-9268&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2079-9268&client=summon