Longo, R. C., McDonnell, S., Dick, D., Wallace, R. M., Chabal, Y. J., Owen, J. H. G., . . . Cho, K. (2014). Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 32(3), . https://doi.org/10.1116/1.4864619
Chicago Style (17th ed.) CitationLongo, Roberto C., Stephen McDonnell, D. Dick, R. M. Wallace, Yves J. Chabal, James H. G. Owen, Josh B. Ballard, John N. Randall, and Kyeongjae Cho. "Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2×1) Surface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 32, no. 3 (2014). https://doi.org/10.1116/1.4864619.
MLA (9th ed.) CitationLongo, Roberto C., et al. "Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2×1) Surface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 32, no. 3, 2014, https://doi.org/10.1116/1.4864619.