Low-cost solution processed nano millet like structure CoS2 film superior to pt as counter electrode for quantum dot sensitized solar cells

Cobalt Sulfide (CoS 2 ) counter electrodes (CE) with uniform size distribution were obtained on fluorine-doped tin oxide (FTO) substrate as counter electrodes for polysulfide redox electrolyte in CdS/CdSe/ ZnS quantum dot-sensitized solar cells (QDSSCs) by chemical bath deposition (CBD) technique. I...

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Published inElectronic materials letters Vol. 11; no. 3; pp. 485 - 493
Main Authors Rao, S. Srinivasa, Punnosse, Dinah, Kim, Soo-Kyoung, Kim, Hee-Je
Format Journal Article
LanguageEnglish
Published Seoul The Korean Institute of Metals and Materials 01.05.2015
대한금속·재료학회
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ISSN1738-8090
2093-6788
DOI10.1007/s13391-014-4158-7

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Abstract Cobalt Sulfide (CoS 2 ) counter electrodes (CE) with uniform size distribution were obtained on fluorine-doped tin oxide (FTO) substrate as counter electrodes for polysulfide redox electrolyte in CdS/CdSe/ ZnS quantum dot-sensitized solar cells (QDSSCs) by chemical bath deposition (CBD) technique. In this study, we optimized the cobalt source, deposition temperature and time in the preparation of CoS 2 thin film to achieve greater conversion efficiency with strong adhesion on FTO. Relative to the platinum (Pt) electrodes, the CoS 2 electrode shows a higher catalytic activity, faster electron transport and lower chargetransfer resistance, which can play a role in rendering higher power conversion efficiency. As a result, QDSSCs with the optimized CoS 2 CE achieved a higher short-circuit current density of 13.08 mA cm -2 , open-circuit voltage of 0.47 V, fill factor of 0.34 and overall photovoltaic conversion efficiency of 2.17% obtained under one sun illumination (100 mW cm -2 ). Therefore, CoS 2 CE can be used as a promising CE in QDSSCs with efficiency exceeding that of high-cost Pt-based cells (1.64%).
AbstractList Cobalt Sulfide (CoS2) counter electrodes (CE) with uniform size distribution were obtained on fluorine-doped tin oxide (FTO) substrate as counter electrodes for polysulfide redox electrolyte in CdS/CdSe/ ZnS quantum dot-sensitized solar cells (QDSSCs) by chemical bath deposition (CBD) technique. In this study, we optimized the cobalt source, deposition temperature and time in the preparation of CoS2 thin film to achieve greater conversion efficiency with strong adhesion on FTO. Relative to the platinum (Pt) electrodes, the CoS2 electrode shows a higher catalytic activity, faster electron transport and lower chargetransfer resistance, which can play a role in rendering higher power conversion efficiency. As a result, QDSSCs with the optimized CoS2 CE achieved a higher short-circuit current density of 13.08 mA cm−2, open-circuit voltage of 0.47 V, fill factor of 0.34 and overall photovoltaic conversion efficiency of 2.17% obtained under one sun illumination (100 mW cm−2). Therefore, CoS2 CE can be used as a promising CE in QDSSCs with efficiency exceeding that of high-cost Pt-based cells (1.64%). KCI Citation Count: 9
Cobalt Sulfide (CoS 2 ) counter electrodes (CE) with uniform size distribution were obtained on fluorine-doped tin oxide (FTO) substrate as counter electrodes for polysulfide redox electrolyte in CdS/CdSe/ ZnS quantum dot-sensitized solar cells (QDSSCs) by chemical bath deposition (CBD) technique. In this study, we optimized the cobalt source, deposition temperature and time in the preparation of CoS 2 thin film to achieve greater conversion efficiency with strong adhesion on FTO. Relative to the platinum (Pt) electrodes, the CoS 2 electrode shows a higher catalytic activity, faster electron transport and lower chargetransfer resistance, which can play a role in rendering higher power conversion efficiency. As a result, QDSSCs with the optimized CoS 2 CE achieved a higher short-circuit current density of 13.08 mA cm -2 , open-circuit voltage of 0.47 V, fill factor of 0.34 and overall photovoltaic conversion efficiency of 2.17% obtained under one sun illumination (100 mW cm -2 ). Therefore, CoS 2 CE can be used as a promising CE in QDSSCs with efficiency exceeding that of high-cost Pt-based cells (1.64%).
Author Punnosse, Dinah
Rao, S. Srinivasa
Kim, Hee-Je
Kim, Soo-Kyoung
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  givenname: S. Srinivasa
  surname: Rao
  fullname: Rao, S. Srinivasa
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  givenname: Dinah
  surname: Punnosse
  fullname: Punnosse, Dinah
  organization: School of Electrical Engineering, Pusan National University
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  fullname: Kim, Soo-Kyoung
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  givenname: Hee-Je
  surname: Kim
  fullname: Kim, Hee-Je
  email: heeje@pusan.ac.kr
  organization: School of Electrical Engineering, Pusan National University
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Cites_doi 10.1016/j.ica.2007.09.025
10.1007/s13391-012-2048-4
10.1038/nmat2222
10.1039/C0CC03401K
10.1021/j100143a041
10.1039/C2CS35374A
10.1021/jp806791s
10.1039/c1cc11317h
10.1016/j.electacta.2014.02.019
10.1016/j.jpowsour.2012.11.023
10.1038/35104607
10.1016/0378-5963(85)90241-7
10.1021/jp309967w
10.1039/c1cp22817j
10.1021/jz300672x
10.1007/s13391-014-4144-0
10.1016/j.electacta.2013.05.149
10.1021/jp112010m
10.1002/anie.201000659
10.1039/c1cc10638d
10.1126/science.1191462
10.1021/nl070430o
10.1007/s11671-010-9592-3
10.1088/0957-4484/20/29/295204
10.1021/ic0508371
10.1021/j100379a051
10.1021/ar900134d
10.1021/ar900141y
10.1002/aenm.201000029
10.1038/353737a0
10.1016/S0254-0584(00)00217-0
10.1021/jp809269m
10.1021/jz400642e
10.1039/c0ee00741b
10.1039/c0cc00642d
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Issue 3
Keywords nano millet structure
counter electrode
quantum dot sensitized solar cells
chemical bath deposition
cobalt sulfide
Language English
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PublicationTitle Electronic materials letters
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대한금속·재료학회
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References ImS. H.KimH. J.RheeJ. H.LimC. S.SeokS.Energy Environ. Sci.201142799
YangZ.ChenC. Y.LiuC. W.ChangH. T.Chem. Commun.2010465485
SelinskyR. S.ShinS.LukowskiM. A.JinS.J. Phys. Chem. Lett.201231649
KimS. K.RajC. J.KimH. J.Electron. Mater. Lett.201461137
FeberM. S.ParkK.AvedoM. C.SantraP. K.JinS.J. Phys. Chem. Lett.201341843
WuM.LinX.HagfeldtA.MaT.Chem. Commun.2011474535
SamburJ. B.NovetT.ParkinsonB. A.Science20103306310.1126/science.1191462
SelinskyR. S.DingQ.FaberM. S.WrightJ. C.JinS.Chem. Soc. Rev.2013422963
TachanZ.ShalomM.HodI.RuhleS.TiroshS.ZabanA.J. Phys. Chem. C20111156162
KimH. J.KimD. J.RaoS. S.SavarirajA. D.KyoungK. S.SonM. K.GopiC. V. V. M.PrabakarK.Electrochimica Acta201412742710.1016/j.electacta.2014.02.019
GopidasK. R.BohorquezM.KamatP. V.J. Phys. Chem.1990946435
YangZ.ChenC. Y.LiuC. W.LiC. L.ChangH. T.Adv. Energy Mater.20111259
ChenH.ZhuL.LiuH.LiW.J. Phys. Chem. C20131173739
NingZ.TianH.YuanC.YuanC.FuY.QinH.SunL.AgrenH.Chem. Commun.2011471536
TaiS. Y.ChangC. F.LiuW. C.LiaoJ. H.LinJ. Y.Electrochimica Acta20131076610.1016/j.electacta.2013.05.149
MulmudiH. K.BatabyalS. K.RaoM.PrabhakarR. R.MathewsN.LamY. M.MhaisalkarS. G.Phys. Chem. Chem. Phys.20111319307
GratzelM.Inorg. Chem.2005446841
DengM.ZhangQ.HuangS.LiD.LuoY.ShenQ.ToyodaT.MenyQ.Nanoscale Res. Lett.20105986
MahlerB.SpinicelliP.BuilS.QuelinX.HermierJ. P.DubertretB.Nature Materials2008765910.1038/nmat2222
GratzelM.Accounts of Chemical Research200942178810.1021/ar900141y
NicolauY. F.Applications of Surface Science198522/23106110.1016/0378-5963(85)90241-7
SeroI. M.GimenezS.SantiagoF. F.GomezR.ShenQ.ToyodaT.BisquertJ.Accounts of Chemical Research200942184810.1021/ar900134d
DibbellR. S.WatsonD. F.J. Phys. Chem. C20091133139
MurakamiT. N.GratzelM.Inorganica Chimica Acta200836157210.1016/j.ica.2007.09.025
ZengX.ZhangW.XieY.XiongD.ChenW.XuC.WangM.J. Power Sources2013226359
LeschkiesK. S.DivakarR.BasuJ.PommerE.BoerckerJ. E.CarterC.KortshagenU. R.NorrisD. J.AydilE. S.Nano Letters20077179310.1021/nl070430o
ManeR. S.LokhandeC. D.Mater. Chem. Phys.2000651
GratzelM.Nature200141433810.1038/35104607
O’ ReganB.GratzelM.Nature199135373710.1038/353737a0
LiuC.LiuZ.LeiE.LiY.HanJ.WangY.LiuZ.YaJ.ChenX.Electron. Mater. Lett.20125481
KamatP. V.J. Phys. Chem. C200811218737
LiG. R.WangF.JiangQ. W.GaoX. P.ShenP. W.Angew. Chem. Int. Ed.2010493653
LiuD.KamatP. V.J. Phys. Chem.19939710769
GimenezS.SeroI. M.MacorL.GuijarroN.VillarrealT. L.GomezR.DigunaL. J.ShenQ.ToyodaT.BisquertJ.Nanotrechnology200920295204
YangZ.ChenC. Y.RoyP.ChangH. T.Chem. Commun.2011479561
K. S. Leschkies (4158_CR17) 2007; 7
C. Liu (4158_CR4) 2012; 5
S. H. Im (4158_CR12) 2011; 4
R. S. Mane (4158_CR15) 2000; 65
S. Gimenez (4158_CR25) 2009; 20
S. Y. Tai (4158_CR6) 2013; 107
R. S. Selinsky (4158_CR22) 2013; 42
M. Gratzel (4158_CR3) 2009; 42
R. S. Dibbell (4158_CR21) 2009; 113
X. Zeng (4158_CR28) 2013; 226
Z. Yang (4158_CR9) 2011; 47
B. Mahler (4158_CR13) 2008; 7
Z. Tachan (4158_CR27) 2011; 115
M. Deng (4158_CR23) 2010; 5
Z. Ning (4158_CR14) 2011; 47
I. M. Sero (4158_CR29) 2009; 42
K. R. Gopidas (4158_CR16) 1990; 94
R. S. Selinsky (4158_CR19) 2012; 3
H. Chen (4158_CR32) 2013; 117
Z. Yang (4158_CR31) 2011; 1
H. K. Mulmudi (4158_CR33) 2011; 13
M. Wu (4158_CR35) 2011; 47
S. K. Kim (4158_CR10) 2014; 6
D. Liu (4158_CR18) 1993; 97
J. B. Sambur (4158_CR11) 2010; 330
M. Gratzel (4158_CR5) 2001; 414
T. N. Murakami (4158_CR7) 2008; 361
M. Gratzel (4158_CR2) 2005; 44
Z. Yang (4158_CR24) 2010; 46
P. V. Kamat (4158_CR8) 2008; 112
Y. F. Nicolau (4158_CR20) 1985; 22/23
G. R. Li (4158_CR34) 2010; 49
H. J. Kim (4158_CR26) 2014; 127
M. S. Feber (4158_CR30) 2013; 4
B. O’ Regan (4158_CR1) 1991; 353
References_xml – reference: LiuD.KamatP. V.J. Phys. Chem.19939710769
– reference: WuM.LinX.HagfeldtA.MaT.Chem. Commun.2011474535
– reference: GimenezS.SeroI. M.MacorL.GuijarroN.VillarrealT. L.GomezR.DigunaL. J.ShenQ.ToyodaT.BisquertJ.Nanotrechnology200920295204
– reference: MulmudiH. K.BatabyalS. K.RaoM.PrabhakarR. R.MathewsN.LamY. M.MhaisalkarS. G.Phys. Chem. Chem. Phys.20111319307
– reference: KamatP. V.J. Phys. Chem. C200811218737
– reference: LiuC.LiuZ.LeiE.LiY.HanJ.WangY.LiuZ.YaJ.ChenX.Electron. Mater. Lett.20125481
– reference: YangZ.ChenC. Y.RoyP.ChangH. T.Chem. Commun.2011479561
– reference: ChenH.ZhuL.LiuH.LiW.J. Phys. Chem. C20131173739
– reference: KimS. K.RajC. J.KimH. J.Electron. Mater. Lett.201461137
– reference: LiG. R.WangF.JiangQ. W.GaoX. P.ShenP. W.Angew. Chem. Int. Ed.2010493653
– reference: SeroI. M.GimenezS.SantiagoF. F.GomezR.ShenQ.ToyodaT.BisquertJ.Accounts of Chemical Research200942184810.1021/ar900134d
– reference: YangZ.ChenC. Y.LiuC. W.LiC. L.ChangH. T.Adv. Energy Mater.20111259
– reference: SamburJ. B.NovetT.ParkinsonB. A.Science20103306310.1126/science.1191462
– reference: DibbellR. S.WatsonD. F.J. Phys. Chem. C20091133139
– reference: NicolauY. F.Applications of Surface Science198522/23106110.1016/0378-5963(85)90241-7
– reference: ZengX.ZhangW.XieY.XiongD.ChenW.XuC.WangM.J. Power Sources2013226359
– reference: O’ ReganB.GratzelM.Nature199135373710.1038/353737a0
– reference: TaiS. Y.ChangC. F.LiuW. C.LiaoJ. H.LinJ. Y.Electrochimica Acta20131076610.1016/j.electacta.2013.05.149
– reference: MahlerB.SpinicelliP.BuilS.QuelinX.HermierJ. P.DubertretB.Nature Materials2008765910.1038/nmat2222
– reference: SelinskyR. S.DingQ.FaberM. S.WrightJ. C.JinS.Chem. Soc. Rev.2013422963
– reference: DengM.ZhangQ.HuangS.LiD.LuoY.ShenQ.ToyodaT.MenyQ.Nanoscale Res. Lett.20105986
– reference: GratzelM.Accounts of Chemical Research200942178810.1021/ar900141y
– reference: GratzelM.Inorg. Chem.2005446841
– reference: GratzelM.Nature200141433810.1038/35104607
– reference: SelinskyR. S.ShinS.LukowskiM. A.JinS.J. Phys. Chem. Lett.201231649
– reference: ManeR. S.LokhandeC. D.Mater. Chem. Phys.2000651
– reference: LeschkiesK. S.DivakarR.BasuJ.PommerE.BoerckerJ. E.CarterC.KortshagenU. R.NorrisD. J.AydilE. S.Nano Letters20077179310.1021/nl070430o
– reference: TachanZ.ShalomM.HodI.RuhleS.TiroshS.ZabanA.J. Phys. Chem. C20111156162
– reference: GopidasK. R.BohorquezM.KamatP. V.J. Phys. Chem.1990946435
– reference: NingZ.TianH.YuanC.YuanC.FuY.QinH.SunL.AgrenH.Chem. Commun.2011471536
– reference: FeberM. S.ParkK.AvedoM. C.SantraP. K.JinS.J. Phys. Chem. Lett.201341843
– reference: KimH. J.KimD. J.RaoS. S.SavarirajA. D.KyoungK. S.SonM. K.GopiC. V. V. M.PrabakarK.Electrochimica Acta201412742710.1016/j.electacta.2014.02.019
– reference: ImS. H.KimH. J.RheeJ. H.LimC. S.SeokS.Energy Environ. Sci.201142799
– reference: MurakamiT. N.GratzelM.Inorganica Chimica Acta200836157210.1016/j.ica.2007.09.025
– reference: YangZ.ChenC. Y.LiuC. W.ChangH. T.Chem. Commun.2010465485
– volume: 361
  start-page: 572
  year: 2008
  ident: 4158_CR7
  publication-title: Inorganica Chimica Acta
  doi: 10.1016/j.ica.2007.09.025
– volume: 5
  start-page: 481
  year: 2012
  ident: 4158_CR4
  publication-title: Electron. Mater. Lett.
  doi: 10.1007/s13391-012-2048-4
– volume: 7
  start-page: 659
  year: 2008
  ident: 4158_CR13
  publication-title: Nature Materials
  doi: 10.1038/nmat2222
– volume: 47
  start-page: 1536
  year: 2011
  ident: 4158_CR14
  publication-title: Chem. Commun.
  doi: 10.1039/C0CC03401K
– volume: 97
  start-page: 10769
  year: 1993
  ident: 4158_CR18
  publication-title: J. Phys. Chem.
  doi: 10.1021/j100143a041
– volume: 42
  start-page: 2963
  year: 2013
  ident: 4158_CR22
  publication-title: Chem. Soc. Rev.
  doi: 10.1039/C2CS35374A
– volume: 112
  start-page: 18737
  year: 2008
  ident: 4158_CR8
  publication-title: J. Phys. Chem. C
  doi: 10.1021/jp806791s
– volume: 47
  start-page: 9561
  year: 2011
  ident: 4158_CR9
  publication-title: Chem. Commun.
  doi: 10.1039/c1cc11317h
– volume: 127
  start-page: 427
  year: 2014
  ident: 4158_CR26
  publication-title: Electrochimica Acta
  doi: 10.1016/j.electacta.2014.02.019
– volume: 226
  start-page: 359
  year: 2013
  ident: 4158_CR28
  publication-title: J. Power Sources
  doi: 10.1016/j.jpowsour.2012.11.023
– volume: 414
  start-page: 338
  year: 2001
  ident: 4158_CR5
  publication-title: Nature
  doi: 10.1038/35104607
– volume: 22/23
  start-page: 1061
  year: 1985
  ident: 4158_CR20
  publication-title: Applications of Surface Science
  doi: 10.1016/0378-5963(85)90241-7
– volume: 117
  start-page: 3739
  year: 2013
  ident: 4158_CR32
  publication-title: J. Phys. Chem. C
  doi: 10.1021/jp309967w
– volume: 13
  start-page: 19307
  year: 2011
  ident: 4158_CR33
  publication-title: Phys. Chem. Chem. Phys.
  doi: 10.1039/c1cp22817j
– volume: 3
  start-page: 1649
  year: 2012
  ident: 4158_CR19
  publication-title: J. Phys. Chem. Lett.
  doi: 10.1021/jz300672x
– volume: 6
  start-page: 1137
  year: 2014
  ident: 4158_CR10
  publication-title: Electron. Mater. Lett.
  doi: 10.1007/s13391-014-4144-0
– volume: 107
  start-page: 66
  year: 2013
  ident: 4158_CR6
  publication-title: Electrochimica Acta
  doi: 10.1016/j.electacta.2013.05.149
– volume: 115
  start-page: 6162
  year: 2011
  ident: 4158_CR27
  publication-title: J. Phys. Chem. C
  doi: 10.1021/jp112010m
– volume: 49
  start-page: 3653
  year: 2010
  ident: 4158_CR34
  publication-title: Angew. Chem. Int. Ed.
  doi: 10.1002/anie.201000659
– volume: 47
  start-page: 4535
  year: 2011
  ident: 4158_CR35
  publication-title: Chem. Commun.
  doi: 10.1039/c1cc10638d
– volume: 330
  start-page: 63
  year: 2010
  ident: 4158_CR11
  publication-title: Science
  doi: 10.1126/science.1191462
– volume: 7
  start-page: 1793
  year: 2007
  ident: 4158_CR17
  publication-title: Nano Letters
  doi: 10.1021/nl070430o
– volume: 5
  start-page: 986
  year: 2010
  ident: 4158_CR23
  publication-title: Nanoscale Res. Lett.
  doi: 10.1007/s11671-010-9592-3
– volume: 20
  start-page: 295204
  year: 2009
  ident: 4158_CR25
  publication-title: Nanotrechnology
  doi: 10.1088/0957-4484/20/29/295204
– volume: 44
  start-page: 6841
  year: 2005
  ident: 4158_CR2
  publication-title: Inorg. Chem.
  doi: 10.1021/ic0508371
– volume: 94
  start-page: 6435
  year: 1990
  ident: 4158_CR16
  publication-title: J. Phys. Chem.
  doi: 10.1021/j100379a051
– volume: 42
  start-page: 1848
  year: 2009
  ident: 4158_CR29
  publication-title: Accounts of Chemical Research
  doi: 10.1021/ar900134d
– volume: 42
  start-page: 1788
  year: 2009
  ident: 4158_CR3
  publication-title: Accounts of Chemical Research
  doi: 10.1021/ar900141y
– volume: 1
  start-page: 259
  year: 2011
  ident: 4158_CR31
  publication-title: Adv. Energy Mater.
  doi: 10.1002/aenm.201000029
– volume: 353
  start-page: 737
  year: 1991
  ident: 4158_CR1
  publication-title: Nature
  doi: 10.1038/353737a0
– volume: 65
  start-page: 1
  year: 2000
  ident: 4158_CR15
  publication-title: Mater. Chem. Phys.
  doi: 10.1016/S0254-0584(00)00217-0
– volume: 113
  start-page: 3139
  year: 2009
  ident: 4158_CR21
  publication-title: J. Phys. Chem. C
  doi: 10.1021/jp809269m
– volume: 4
  start-page: 1843
  year: 2013
  ident: 4158_CR30
  publication-title: J. Phys. Chem. Lett.
  doi: 10.1021/jz400642e
– volume: 4
  start-page: 2799
  year: 2011
  ident: 4158_CR12
  publication-title: Energy Environ. Sci.
  doi: 10.1039/c0ee00741b
– volume: 46
  start-page: 5485
  year: 2010
  ident: 4158_CR24
  publication-title: Chem. Commun.
  doi: 10.1039/c0cc00642d
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Snippet Cobalt Sulfide (CoS 2 ) counter electrodes (CE) with uniform size distribution were obtained on fluorine-doped tin oxide (FTO) substrate as counter electrodes...
Cobalt Sulfide (CoS2) counter electrodes (CE) with uniform size distribution were obtained on fluorine-doped tin oxide (FTO) substrate as counter electrodes...
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SubjectTerms Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed Matter Physics
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Optical and Electronic Materials
Original Article
전자/정보통신공학
Title Low-cost solution processed nano millet like structure CoS2 film superior to pt as counter electrode for quantum dot sensitized solar cells
URI https://link.springer.com/article/10.1007/s13391-014-4158-7
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