Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

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Bibliographic Details
Published inChinese physics letters Vol. 28; no. 5; p. 057102
Main Authors Wang, Yong (勇王), Yu, Nai-Sen (乃森 于), Li, Ming (明黎), Lau, Kei-May (纪美 刘)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2011
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/28/5/057102

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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/5/057102