APA (7th ed.) Citation

Wang, Y., Yu, N., Li, M., & Lau, K. (2011). Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD. Chinese physics letters, 28(5), 057102. https://doi.org/10.1088/0256-307X/28/5/057102

Chicago Style (17th ed.) Citation

Wang, Yong, Nai-Sen Yu, Ming Li, and Kei-May Lau. "Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD." Chinese Physics Letters 28, no. 5 (2011): 057102. https://doi.org/10.1088/0256-307X/28/5/057102.

MLA (9th ed.) Citation

Wang, Yong, et al. "Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD." Chinese Physics Letters, vol. 28, no. 5, 2011, p. 057102, https://doi.org/10.1088/0256-307X/28/5/057102.