Influence of Li doping on the optical and magnetic properties of ZnO nanorods synthesized by low temperature hydrothermal method

Well-defined pure Zn1−xLixO (x=0, 0.05 and 0.1) nanorods were hydrothermally synthesized at the low temperature of 90°C. The X-ray diffraction patterns of all three compositions with a single diffraction peak (0002) showed the same wurtzite hexagonal structure due to the similar radius of Zn and Li....

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 529; pp. 181 - 184
Main Authors Kung, C.Y., Lin, C.C., Young, S.L., Horng, Lance, Shih, Y.T., Kao, M.C., Chen, H.Z., Lin, H.H., Lin, J.H., Wang, S.J., Li, J.M.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.2013
Elsevier
Subjects
Online AccessGet full text
ISSN0040-6090
1879-2731
DOI10.1016/j.tsf.2012.05.044

Cover

More Information
Summary:Well-defined pure Zn1−xLixO (x=0, 0.05 and 0.1) nanorods were hydrothermally synthesized at the low temperature of 90°C. The X-ray diffraction patterns of all three compositions with a single diffraction peak (0002) showed the same wurtzite hexagonal structure due to the similar radius of Zn and Li. The optical and magnetic properties were influenced by the oxygen vacancies induced by Li doping in the ZnO nanorods. The Raman shift spectrum indicated a slight increasement of oxygen vacancies which enhanced the green emission and ferromagnetism by the doping of Li in the ZnO nanorods. Besides, p-type ZnO:Li semiconductor nanorods were obtained by Li doping. The characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. ► Zn1−xLixO nanorods have grown by hydrothermal method at a low temperature of 90°C. ► Doping of Li increases the doping-induced defects. ► Saturation magnetization increases as Li content increases. ► ZnO-based UV photodetector with nanorod structure is achieved.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2012.05.044