A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz.U...
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| Published in | Journal of semiconductors Vol. 31; no. 2; pp. 5 - 6 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.02.2010
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/31/2/024001 |
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| Abstract | This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz.Under VDS=30 V,CW operating conditions at 14 GHz,the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a power added efficiency of 41%.Under pulse operating conditions,the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W.The power density reaches 3.4 W/mm. |
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| AbstractList | This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz.Under VDS=30 V,CW operating conditions at 14 GHz,the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a power added efficiency of 41%.Under pulse operating conditions,the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W.The power density reaches 3.4 W/mm. |
| Author | 王东方 陈晓娟 刘新宇 |
| AuthorAffiliation | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China Graduated University of the Chinese Academy of Sciences, Beijing 100049, China |
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| Cites_doi | 10.1109/MWSYM.2005.1516636 |
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| Notes | Ku band O484.1 AlGaN/GaN HEMT AlGaN/GaN HEMT; Ku band; power power 11-5781/TN TN304.23 |
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| References | 1 Feng Zhen (4) 2007; 28 Takagi K (2) 2007 Micovic M (3) 2006 |
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| Snippet | This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate... |
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| SubjectTerms | AlGaN HEMT Ku波段 功率增益 增益压缩 最高振荡频率 蓝宝石衬底 输出功率 |
| Title | A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate |
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