Crosstalk of HgCdTe LWIR n-on-p diode arrays
Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experime...
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          | Published in | Journal of semiconductors Vol. 30; no. 9; pp. 49 - 52 | 
|---|---|
| Main Author | |
| Format | Journal Article | 
| Language | English | 
| Published | 
            IOP Publishing
    
        01.09.2009
     | 
| Subjects | |
| Online Access | Get full text | 
| ISSN | 1674-4926 | 
| DOI | 10.1088/1674-4926/30/9/094007 | 
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| Abstract | Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed. | 
    
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| AbstractList | Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed. | 
    
| Author | 孙英会 张波 于梅芳 廖清君 张燕 文鑫 姜佩璐 胡晓宁 戴宁 | 
    
| AuthorAffiliation | Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China | 
    
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| Cites_doi | 10.1117/12.218241 10.1016/S1350-4495(02)00146-9 10.1007/BF02665858 10.1117/12.522217 10.1116/1.574834 10.2478/s11772-008-0023-2 10.1007/s11664-999-0044-8  | 
    
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| Notes | n-on-p diode arrays TN248.1 crosstalk; HgCdTe; n-on-p diode arrays; scanning laser microscope crosstalk scanning laser microscope HgCdTe 11-5781/TN TP73  | 
    
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| References | Ying Chengping (3) 2006; 2 1 4 Zhang Zhiyong (2) 1997; 19 5 6 7 8 9  | 
    
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| Snippet | Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode... | 
    
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| SubjectTerms | 串扰 二极管阵列 测量过程 液氮温度 激光扫描显微镜 碲镉汞 磷 长波红外  | 
    
| Title | Crosstalk of HgCdTe LWIR n-on-p diode arrays | 
    
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