Crosstalk of HgCdTe LWIR n-on-p diode arrays

Crosstalk of HgCdTe long-wavelength infrared （LWIR） n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experime...

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Bibliographic Details
Published inJournal of semiconductors Vol. 30; no. 9; pp. 49 - 52
Main Author 孙英会 张波 于梅芳 廖清君 张燕 文鑫 姜佩璐 胡晓宁 戴宁
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2009
Subjects
串扰
二极管阵列
测量过程
液氮温度
激光扫描显微镜
碲镉汞
磷
长波红外
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ISSN1674-4926
DOI10.1088/1674-4926/30/9/094007

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Summary:Crosstalk of HgCdTe long-wavelength infrared （LWIR） n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area （optically sensitive area） is also measured and discussed.
Bibliography:n-on-p diode arrays
TN248.1
crosstalk; HgCdTe; n-on-p diode arrays; scanning laser microscope
crosstalk
scanning laser microscope
HgCdTe
11-5781/TN
TP73
ISSN:1674-4926
DOI:10.1088/1674-4926/30/9/094007