Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film - 唐龙娟 朱银芳 杨晋玲 李艳 周威 解婧 刘云飞 杨富华 (Journal of semiconductors, 2009)
Keywords: PECVD法; 刻蚀速率; 化学气相沉积; 气体流量; 氮化硅薄膜; 蚀刻率; 退火条件; 退火温度