李晋闽, 纪. 孙. 刘. 王. 赵. 曾. (2009). Epitaxial growth on 4H-SiC by TCS as a silicon precursor. Journal of semiconductors, 30(9), 21-25. https://doi.org/10.1088/1674-4926/30/9/093006
Chicago Style (17th ed.) Citation李晋闽, 纪刚 孙国胜 刘兴昉 王雷 赵万顺 曾一平. "Epitaxial Growth on 4H-SiC by TCS as a Silicon Precursor." Journal of Semiconductors 30, no. 9 (2009): 21-25. https://doi.org/10.1088/1674-4926/30/9/093006.
MLA (9th ed.) Citation李晋闽, 纪刚 孙国胜 刘兴昉 王雷 赵万顺 曾一平. "Epitaxial Growth on 4H-SiC by TCS as a Silicon Precursor." Journal of Semiconductors, vol. 30, no. 9, 2009, pp. 21-25, https://doi.org/10.1088/1674-4926/30/9/093006.
Warning: These citations may not always be 100% accurate.