Effects of Slurry in Cu Chemical Mechanical Polishing (CMP) of TSVs for 3-D IC Integration - Jui-Chin Chen; Lau, J. H.; Pei-Jer Tzeng; Shang-Chun Chen; Chien-Ying Wu; Chien Chou Chen; Yu Chen Hsin; Yi-Feng Hsu; Shang Hung Shen; Sue-Chen Liao; Chi-Hon Ho; Cha-Hsin Lin; et al. (IEEE transactions on components, packaging, and manufacturing technology (2011), 2012)
Keywords: Applied sciences; BULGING; Chemical-mechanical polishing; Copper; Cu slurry; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; MECHANICAL POLISHING; MICA; Microelectronic fabrication (materials and surfaces technology); OXIDES; PASSIVATION; POLISHING; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; SLURRIES; Studs; Surface topography; through silicon via; Through-silicon vias; Wafers; Performance evaluation; Critical size; Particle suspension; Cu slurry; Chemical-mechanical polishing; Optimization; Back surface; Microelectronic fabrication; Planarization; Three dimensional structure; Wear rate; through silicon via; Interconnection; Integrated circuit; polishing; Silicon; Copper; Chemical mechanical polishing; Wafer; Passivation; Via hole