A Fully Integrated Architecture for Fast and Accurate Programming of Floating Gates Over Six Decades of Current
This paper presents an on-chip system with digital serial peripheral interface (SPI) interface that enables accurate programming of floating gate arrays at a high speed. The main component allowing this speedup is a floating point current measuring analog-to-digital convertor (ADC). The ADC comprise...
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| Published in | IEEE transactions on very large scale integration (VLSI) systems Vol. 19; no. 6; pp. 953 - 962 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York, NY
IEEE
01.06.2011
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1063-8210 1557-9999 |
| DOI | 10.1109/TVLSI.2010.2042626 |
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| Summary: | This paper presents an on-chip system with digital serial peripheral interface (SPI) interface that enables accurate programming of floating gate arrays at a high speed. The main component allowing this speedup is a floating point current measuring analog-to-digital convertor (ADC). The ADC comprises a wide range logarithmic transimpedance amplifier (TIA) followed by a linear ramp ADC. The TIA operates over seven decades of current going down to sub-pA levels. It incorporates an adaptive biasing scheme to save power. The topology provides a relatively temperature independent measurement of the floating-gate voltage. The TIA-ADC combination operates over six decades at a thermal noise limited accuracy of 9.5 bits when average conversion time is around 500 μs. The system features level-shifters and selection circuitry at the periphery of the floating gate array, current-steering digital-to-analog converters (DACs) to set gate and drain voltages, and SPI for a microprocessor or field-programmable gate array (FPGA). Algorithms using either pulse-width modulation or drain voltage modulation can be implemented on this platform. We present data for this system from 0.5 μm AMI and 0.35 μ m TSMC processes. |
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| Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Article-2 ObjectType-Feature-1 content type line 23 |
| ISSN: | 1063-8210 1557-9999 |
| DOI: | 10.1109/TVLSI.2010.2042626 |