Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

• Published in: Chinese physics B Vol. 25; no. 6; pp. 383 - 389
• Main Author: 闫兆文 王娇 乔坚栗 谌文杰 杨盼 肖彤 杨建红
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2016
• Subjects: Computer simulation; Data storage; device simulation; Electric potential; Gates; Memory devices; organic floating gate memory; Oxides; polysilicon floating gate; programing and erasing operations; Simulation; Voltage; 器件设计; 多晶硅; 存储器件; 接触结构; 数值模拟; 浮栅; 记忆效应; 非易失性存储器
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/25/6/067102

A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing（P/E） operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.