杨建红, 闫. 王. 乔. 谌. 杨. 肖. (2016). Numerical simulation study of organic nonvolatile memory with polysilicon floating gate. Chinese physics B, 25(6), 383-389. https://doi.org/10.1088/1674-1056/25/6/067102
Chicago Style (17th ed.) Citation杨建红, 闫兆文 王娇 乔坚栗 谌文杰 杨盼 肖彤. "Numerical Simulation Study of Organic Nonvolatile Memory with Polysilicon Floating Gate." Chinese Physics B 25, no. 6 (2016): 383-389. https://doi.org/10.1088/1674-1056/25/6/067102.
MLA (9th ed.) Citation杨建红, 闫兆文 王娇 乔坚栗 谌文杰 杨盼 肖彤. "Numerical Simulation Study of Organic Nonvolatile Memory with Polysilicon Floating Gate." Chinese Physics B, vol. 25, no. 6, 2016, pp. 383-389, https://doi.org/10.1088/1674-1056/25/6/067102.
Warning: These citations may not always be 100% accurate.