Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials

Simulation of the heat consumption in phase change random access memories （PCRAMs） is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivity of the buffer layer are crucial in controlling the heating efficiency in RESET proc...

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Bibliographic Details
Published inChinese physics letters Vol. 27; no. 8; pp. 246 - 249
Main Author 龚岳峰 宋志棠 凌云 刘燕 李宜瑾 封松林
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.08.2010
Subjects
Buffer layers
Computer simulation
Electrical resistivity
Heating
Mathematical analysis
Resistivity
Thermal conductivity
Ti02
Titanium dioxide
三维有限元模型
材料
模拟
热特性
热量消耗
缓冲层
随机存取
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/27/8/088501

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Summary:Simulation of the heat consumption in phase change random access memories （PCRAMs） is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivity of the buffer layer are crucial in controlling the heating efficiency in RESET process. The buffer layer mater/Ms W, TiN, WOa, Ti02 and poly-germanium （poly-Ge） are applied in the simulation respectively, and compared with each other. The simulation results show that limitation of electrical conductivity is effective on heating efficiency and the limitation of thermal conductivity is important on the reliable RESET process.
Bibliography:11-1959/O4
TP311.13
TQ336.1
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/8/088501