The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection
High voltage IGBT modules are used in high power applications including traction, industrial drives, grid systems and renewables such as in wind-power generation and conversion. Many of these applications are subject to harsh environmental conditions and in particular when the inverter cabinets do n...
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| Published in | Microelectronics and reliability Vol. 88-90; pp. 470 - 475 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.09.2018
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0026-2714 1872-941X |
| DOI | 10.1016/j.microrel.2018.07.130 |
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| Abstract | High voltage IGBT modules are used in high power applications including traction, industrial drives, grid systems and renewables such as in wind-power generation and conversion. Many of these applications are subject to harsh environmental conditions and in particular when the inverter cabinets do not shield the power electronics, including the IGBT modules, from such conditions. As an example, IGBT modules can be exposed to severe humidity levels. In this paper we investigate the influence of the combination of humidity and high voltage on the blocking reliability of 6.5 kV IGBT and diode devices. An improved testing approach High Voltage, High Humidity, High Temperature reverse biased (THBHV-DC) when compared to classical THB is applied to assess the robustness of different termination designs and passivation stacks. Full description of the failure mode and of its correlation to the humidity induced electrical field modifications is also provided. This analysis offers an insight on the design and testing aspects which are of key importance to the development of environmentally robust high power IGBTs.
•Simulation prediction of potential failure points on 6.5kV IGBTs and Diodes shown simulating dry vs. wet conditions•THBHV-DC or H3TRB test performed and el. results shown•Optical analysis of failed devices shown•Failure explained by simulations and theory by corrosion of passivation material•Every point of corrosion theory proven on the device by SEM and EDX analysis (Nitride corrosion, Nitride outgassing, Aluminum corrosion, Polyimide lift-off)•Improved devices shown with improved capability |
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| AbstractList | High voltage IGBT modules are used in high power applications including traction, industrial drives, grid systems and renewables such as in wind-power generation and conversion. Many of these applications are subject to harsh environmental conditions and in particular when the inverter cabinets do not shield the power electronics, including the IGBT modules, from such conditions. As an example, IGBT modules can be exposed to severe humidity levels. In this paper we investigate the influence of the combination of humidity and high voltage on the blocking reliability of 6.5 kV IGBT and diode devices. An improved testing approach High Voltage, High Humidity, High Temperature reverse biased (THBHV-DC) when compared to classical THB is applied to assess the robustness of different termination designs and passivation stacks. Full description of the failure mode and of its correlation to the humidity induced electrical field modifications is also provided. This analysis offers an insight on the design and testing aspects which are of key importance to the development of environmentally robust high power IGBTs.
•Simulation prediction of potential failure points on 6.5kV IGBTs and Diodes shown simulating dry vs. wet conditions•THBHV-DC or H3TRB test performed and el. results shown•Optical analysis of failed devices shown•Failure explained by simulations and theory by corrosion of passivation material•Every point of corrosion theory proven on the device by SEM and EDX analysis (Nitride corrosion, Nitride outgassing, Aluminum corrosion, Polyimide lift-off)•Improved devices shown with improved capability |
| Author | Schneider, Daniel Corvasce, Chiara Papadopoulos, Charalampos Rahimo, Munaf Pâques, Gontran Kopta, Arnost |
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| CitedBy_id | crossref_primary_10_1016_j_microrel_2022_114766 crossref_primary_10_1016_j_microrel_2019_06_011 crossref_primary_10_1016_j_microrel_2021_114207 crossref_primary_10_1016_j_microrel_2023_115228 crossref_primary_10_1116_1_5121880 crossref_primary_10_1109_ACCESS_2021_3133530 crossref_primary_10_4028_p_7j50kd crossref_primary_10_1016_j_microrel_2020_113707 crossref_primary_10_1007_s43236_023_00726_9 crossref_primary_10_1109_ACCESS_2021_3049738 crossref_primary_10_1007_s43236_021_00228_6 crossref_primary_10_3390_electronics9111884 crossref_primary_10_1016_j_microrel_2023_115241 crossref_primary_10_1016_j_microrel_2025_115674 crossref_primary_10_1016_j_microrel_2021_114211 crossref_primary_10_1016_j_polymdegradstab_2022_110197 |
| Cites_doi | 10.1149/1.2221147 10.1039/c2cp42760e |
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| Keywords | Polyimide THBHV-DC Semiconductor Electrochemical corrosion H3TRB Nitride Passivation THB |
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| References | Pâques (bb0020) 2014 Osenbach (bb0025) December 1993; 140 Tanaka (bb0015) 2015 Oku (bb0035) 2014 Rahimo (bb0040) 2015 Zorn, Kaminski (bb0010) 2015 Xu (bb0030) 2012; 14 Zorn, Kaminski (bb0005) 2014 Pâques (10.1016/j.microrel.2018.07.130_bb0020) 2014 Zorn (10.1016/j.microrel.2018.07.130_bb0010) 2015 Tanaka (10.1016/j.microrel.2018.07.130_bb0015) 2015 Xu (10.1016/j.microrel.2018.07.130_bb0030) 2012; 14 Rahimo (10.1016/j.microrel.2018.07.130_bb0040) 2015 Osenbach (10.1016/j.microrel.2018.07.130_bb0025) 1993; 140 Zorn (10.1016/j.microrel.2018.07.130_bb0005) 2014 Oku (10.1016/j.microrel.2018.07.130_bb0035) 2014 |
| References_xml | – year: 2014 ident: bb0005 article-title: Temperature Humidity Bias (THB) testing on IGBT modules at high bias levels publication-title: Proc. International Conference on Integrated Power Systems (CIPS), Nuremburg – year: 2015 ident: bb0010 article-title: Acceleration of Temperature Humidity Bias (THB) testing on IGBT modules by high bias levels publication-title: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong – year: 2014 ident: bb0020 article-title: A new HiPak module platform with improved reliability publication-title: PCIM 2014, Nuremburg – year: 2015 ident: bb0040 article-title: The impact on power semiconductor device operation due to local electric field alterations in the junction termination region publication-title: Microelectron. J. – year: 2014 ident: bb0035 article-title: Moisture resistance of insulating films for compound semiconductor devices publication-title: CS MANTECH Conference, May 19th–22nd – volume: 14 start-page: 14534 year: 2012 end-page: 14539 ident: bb0030 article-title: Metal oxidation kinetics and the transition from thin to thick films publication-title: Phys. Chem. Chem. Phys. – volume: 140 year: December 1993 ident: bb0025 article-title: Water-induced corrosion of materials used for semiconductor passivation publication-title: J. Electrochem. Soc. – year: 2015 ident: bb0015 article-title: Robust HVIGBT module design against high humidity publication-title: PCIM 2015, Nuremburg – year: 2015 ident: 10.1016/j.microrel.2018.07.130_bb0010 article-title: Acceleration of Temperature Humidity Bias (THB) testing on IGBT modules by high bias levels – year: 2015 ident: 10.1016/j.microrel.2018.07.130_bb0040 article-title: The impact on power semiconductor device operation due to local electric field alterations in the junction termination region publication-title: Microelectron. J. – volume: 140 issue: 12 year: 1993 ident: 10.1016/j.microrel.2018.07.130_bb0025 article-title: Water-induced corrosion of materials used for semiconductor passivation publication-title: J. Electrochem. Soc. doi: 10.1149/1.2221147 – year: 2014 ident: 10.1016/j.microrel.2018.07.130_bb0035 article-title: Moisture resistance of insulating films for compound semiconductor devices – year: 2015 ident: 10.1016/j.microrel.2018.07.130_bb0015 article-title: Robust HVIGBT module design against high humidity – year: 2014 ident: 10.1016/j.microrel.2018.07.130_bb0020 article-title: A new HiPak module platform with improved reliability – volume: 14 start-page: 14534 year: 2012 ident: 10.1016/j.microrel.2018.07.130_bb0030 article-title: Metal oxidation kinetics and the transition from thin to thick films publication-title: Phys. Chem. Chem. Phys. doi: 10.1039/c2cp42760e – year: 2014 ident: 10.1016/j.microrel.2018.07.130_bb0005 article-title: Temperature Humidity Bias (THB) testing on IGBT modules at high bias levels |
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| Title | The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection |
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