ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture. Here, we develop a perovskite electrochemical cell both for light emission and detection, wher...

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Bibliographic Details
Published inOpto-Electronic Advances Vol. 6; no. 9; p. 220154
Main Authors Baeva, Maria, Gets, Dmitry, Polushkin, Artem, Vorobyov, Aleksandr, Goltaev, Aleksandr, Neplokh, Vladimir, Mozharov, Alexey, Krasnikov, Dmitry V., Nasibulin, Albert G., Mukhin, Ivan, Makarov, Sergey
Format Journal Article
LanguageEnglish
Published Institue of Optics and Electronics, Chinese Academy of Sciences 01.01.2023
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ISSN2096-4579
DOI10.29026/oea.2023.220154

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Summary:Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture. Here, we develop a perovskite electrochemical cell both for light emission and detection, where the active layer consists of a composite material made of halide perovskite microcrystals, polymer support matrix, and added mobile ions. The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition, emitting light at the wavelength of 523 nm, yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 1.3×105 lm/W. The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates. Moreover, the device operates as a photodetector with a sensitivity up to 0.75 A/W, specific detectivity of 8.56×1011 Jones, and linear dynamic range of 48 dB. The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50 μm.
ISSN:2096-4579
DOI:10.29026/oea.2023.220154