Investigations of growth kinetics of pulsed laser deposition of tin oxide films by isotope tracer technique
Tin dioxide ( SnO 2 ) is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical deposition of single crystalline films from vapor phase is the most promising way for growing high-quality SnO 2 films. In this paper, the growth...
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| Published in | Journal of applied physics Vol. 108; no. 10; pp. 104901 - 104901-7 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
American Institute of Physics
15.11.2010
|
| Online Access | Get full text |
| ISSN | 0021-8979 1089-7550 |
| DOI | 10.1063/1.3506714 |
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| Abstract | Tin dioxide
(
SnO
2
)
is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical deposition of single crystalline films from vapor phase is the most promising way for growing high-quality
SnO
2
films. In this paper, the growth kinetics of the pulsed laser deposition (PLD) of
SnO
2
films has been elucidated by varying the growth conditions and using the isotope tracer technique. We have experimentally demonstrated that relatively low oxygen partial pressures and high growth temperatures cause the re-evaporation of Sn from the surface of a growing film; these conditions are essential to achieve layer-by-layer growth of
SnO
2
by PLD. Further, when a
TiO
2
substrate with an atomically flat surface was used, the
SnO
2
film had an atomically flat surface. |
|---|---|
| AbstractList | Tin dioxide
(
SnO
2
)
is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical deposition of single crystalline films from vapor phase is the most promising way for growing high-quality
SnO
2
films. In this paper, the growth kinetics of the pulsed laser deposition (PLD) of
SnO
2
films has been elucidated by varying the growth conditions and using the isotope tracer technique. We have experimentally demonstrated that relatively low oxygen partial pressures and high growth temperatures cause the re-evaporation of Sn from the surface of a growing film; these conditions are essential to achieve layer-by-layer growth of
SnO
2
by PLD. Further, when a
TiO
2
substrate with an atomically flat surface was used, the
SnO
2
film had an atomically flat surface. Tin dioxide (SnO2) is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical deposition of single crystalline films from vapor phase is the most promising way for growing high-quality SnO2 films. In this paper, the growth kinetics of the pulsed laser deposition (PLD) of SnO2 films has been elucidated by varying the growth conditions and using the isotope tracer technique. We have experimentally demonstrated that relatively low oxygen partial pressures and high growth temperatures cause the re-evaporation of Sn from the surface of a growing film; these conditions are essential to achieve layer-by-layer growth of SnO2 by PLD. Further, when a TiO2 substrate with an atomically flat surface was used, the SnO2 film had an atomically flat surface. |
| Author | Adachi, Yutaka Sakaguchi, Isao Ohashi, Naoki Zhen, Yuhua Ohsawa, Takeo Li, Jianyong Nishimura, Toshiyuki Haneda, Hajime Matsuoka, Ryota Li, Baoe Matsumoto, Kenji |
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| Snippet | Tin dioxide
(
SnO
2
)
is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical... Tin dioxide (SnO2) is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical... |
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| Title | Investigations of growth kinetics of pulsed laser deposition of tin oxide films by isotope tracer technique |
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