A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating

By using the numerical simulation for the temperature field in the metal organic vapor deposition （MOCVD） reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes...

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Published inJournal of semiconductors Vol. 35; no. 9; pp. 11 - 15
Main Author 李志明 李海玲 甘小冰 江海鹰 李金屏 付小倩 韩延彬 夏英杰 尹建芹 黄艺美 胡仕刚
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
MOCVD
不均匀
反应器
垂直
感应加热
接受器
气相沉积
温度分布
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/35/9/092003

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Abstract By using the numerical simulation for the temperature field in the metal organic vapor deposition （MOCVD） reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a A-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method （FEM）, the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the A-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.
AbstractList By using the numerical simulation for the temperature field in the metal organic vapor deposition （MOCVD） reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a A-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method （FEM）, the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the A-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.
Author 李志明 李海玲 甘小冰 江海鹰 李金屏 付小倩 韩延彬 夏英杰 尹建芹 黄艺美 胡仕刚
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Cites_doi 10.1088/1674-4926/34/11/113002
10.1016/j.jcrysgro.2010.09.026
10.1088/1674-4926/32/12/124003
10.1088/1674-4926/35/1/014008
10.1016/S0022-0248(02)01856-0
10.1088/1674-4926/35/1/014007
10.1007/s11432-010-4067-9
10.1088/1674-4926/34/11/114004
10.1016/j.ijheatmasstransfer.2010.01.042
10.1016/j.jcrysgro.2010.07.035
10.1016/j.icheatmasstransfer.2013.01.003
10.1088/1674-4926/34/5/053004
10.1016/j.jcrysgro.2009.07.013
10.1016/j.jcrysgro.2012.08.041
10.1016/j.jcrysgro.2009.01.092
10.1021/nl4015205
10.1016/j.jcrysgro.2011.11.045
10.1088/1674-4926/33/9/093005
10.1088/1674-4926/33/11/113002
10.1016/j.jcrysgro.2004.02.061
10.1088/1674-4926/32/8/083002
10.1088/1674-4926/35/4/043002
10.1016/j.jcrysgro.2009.10.007
10.1016/j.jcrysgro.2012.07.002
10.1016/j.jcrysgro.2013.01.005
10.1088/1674-4926/33/7/073002
10.1016/j.jcrysgro.2004.11.373
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Notes Li Zhiming, Li Hailing, Gan Xiaobing, Jiang Haiying, Li Jinping, Fu Xiaoqian, Han Yanbin, Xia Yingjie, Yin Jianqin, Huang Yimei, and Hu Shigang4 （1.Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Ji＇nan 250022, China; 2.Shandong College of Electronic Technology, Ji＇nan 250022, China ;3.College of Management, Shenzhen University, Shenzhen 518060, China ;4.School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China）
induction heat; MOCVD; finite element analysis; temperature field
11-5781/TN
By using the numerical simulation for the temperature field in the metal organic vapor deposition （MOCVD） reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a A-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method （FEM）, the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the A-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.
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References 22
23
25
26
27
28
Chen Xinliang (9) 2014; 35
Jing Liang (18) 2013; 34
Liu Bo (10) 2011; 32
13
15
Gu Guodong (6) 2013; 34
16
17
19
Yang Zhen (3) 2014; 35
Wang Chong (14) 2014; 35
Liang Meng (2) 2012; 33
1
4
7
Gurary A I (24) 2002
Tao Tao (8) 2011; 32
Tao Zhikuo (11) 2012; 33
Zhu Shaoxin (5) 2013; 34
Gu Chengyan (12) 2012; 33
20
21
References_xml – volume: 34
  start-page: 113002
  year: 2013
  ident: 18
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/34/11/113002
– ident: 4
  doi: 10.1016/j.jcrysgro.2010.09.026
– volume: 32
  start-page: 124003
  year: 2011
  ident: 10
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/32/12/124003
– volume: 35
  start-page: 014008
  year: 2014
  ident: 14
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/35/1/014008
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  doi: 10.1016/S0022-0248(02)01856-0
– volume: 35
  start-page: 014007
  year: 2014
  ident: 3
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/35/1/014007
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  doi: 10.1007/s11432-010-4067-9
– volume: 34
  start-page: 114004
  year: 2013
  ident: 6
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/34/11/114004
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  doi: 10.1016/j.ijheatmasstransfer.2010.01.042
– ident: 22
  doi: 10.1016/j.jcrysgro.2010.07.035
– ident: 16
  doi: 10.1016/j.icheatmasstransfer.2013.01.003
– volume: 34
  start-page: 053004
  year: 2013
  ident: 5
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/34/5/053004
– ident: 21
  doi: 10.1016/j.jcrysgro.2009.07.013
– ident: 13
  doi: 10.1016/j.jcrysgro.2012.08.041
– ident: 23
  doi: 10.1016/j.jcrysgro.2009.01.092
– year: 2002
  ident: 24
  publication-title: Induction heated chemical vapor deposition reactor
– ident: 7
  doi: 10.1021/nl4015205
– ident: 1
  doi: 10.1016/j.jcrysgro.2011.11.045
– volume: 33
  start-page: 093005
  year: 2012
  ident: 12
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/33/9/093005
– volume: 33
  start-page: 113002
  year: 2012
  ident: 2
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/33/11/113002
– ident: 27
  doi: 10.1016/j.jcrysgro.2004.02.061
– volume: 32
  start-page: 083002
  year: 2011
  ident: 8
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/32/8/083002
– volume: 35
  start-page: 043002
  year: 2014
  ident: 9
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/35/4/043002
– ident: 28
  doi: 10.1016/j.jcrysgro.2009.10.007
– ident: 15
  doi: 10.1016/j.jcrysgro.2012.07.002
– ident: 25
  doi: 10.1016/j.jcrysgro.2013.01.005
– volume: 33
  start-page: 073002
  year: 2012
  ident: 11
  publication-title: Journal of Semiconductors
  doi: 10.1088/1674-4926/33/7/073002
– ident: 17
  doi: 10.1016/j.jcrysgro.2004.11.373
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SubjectTerms MOCVD
不均匀
反应器
垂直
感应加热
接受器
气相沉积
温度分布
Title A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating
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