Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits-Transient Analysis, Parasitics, and Scalability - Keshavarzi, A.; Raychowdhury, A.; Kurtin, J.; Roy, K.; De, V. (IEEE transactions on electron devices, 2006)
Keywords: Applied sciences; Capacitance; Carbon; Carbon nanotube field-effect transistors (CNFETs); Carbon nanotubes; Circuit properties; Circuits; CNTFETs; Delays; Devices; Digital; Digital circuits; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; high-performance circuits; Logic gates; Molecular electronics, nanoelectronics; Nanostructure; Optimization; packing density; parasitic resistance and capacitance; Performance evaluation; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Silicon; Theoretical study. Circuits analysis and design; transient analysis; Transistors; Performance evaluation; high-performance circuits; MOSFET; State of the art; Circuit design; Scalability; Charge carrier mobility; Network architecture; Carbon nanotubes; Carbon nanotube field-effect transistors (CNFETs); Nanoelectronics; Complementary MOS technology; Network analysis; Nanocontacts; Capacitive load; Transient analysis; High performance; parasitic resistance and capacitance; Nanotube devices; Transistor circuits; System design; Field effect transistor; Interconnection; Integrated circuit; Capacitance; Digital circuit; packing density; Schottky barrier