Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation - 肖尧 郭红霞 张凤祁 赵雯 王燕萍 张科营 丁李利 范雪 罗尹虹 王园明 (Chinese physics B, 2014)
Keywords: Asymmetry; CMOS; CMOS晶体管; Cross sections (physics); Flux; Leakage current; Proton irradiation; Single event upsets; Static random access memory; Synergistic effect; 事件; 协同效应; 总剂量; 灵敏度; 累积剂量; 质子辐射; 静态随机存取存储器