Fabrication and sensing properties of a micro-humidity sensor system using CMOS technology
A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor empl...
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| Published in | Electronic materials letters Vol. 6; no. 1; pp. 7 - 12 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Dordrecht
Springer Netherlands
01.03.2010
대한금속·재료학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1738-8090 2093-6788 |
| DOI | 10.3365/eml.2010.03.007 |
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| Abstract | A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor employs carbon nitride films as a new sensing material and has a pair of transistors, a sensing transistor and a non-sensing transistor (reference transistor), to eliminate unexpected effects. The drain current of the FET humidity sensor increases from 0.88 mA to 0.99 mA as the relative humidity increases from 10 %RH to 70 %RH. |
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| AbstractList | A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor employs carbon nitride films as a new sensing material and has a pair of transistors, a sensing transistor and a non-sensing transistor (reference transistor), to eliminate unexpected effects. The drain current of the FET humidity sensor increases from 0.88 mA to 0.99 mA as the relative humidity increases from 10 %RH to 70 %RH. A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor employs carbon nitride films as a new sensing material and has a pair of transistors, a sensing transistor and a non-sensing transistor (reference transistor), to eliminate unexpected effects. The drain current of the FET humidity sensor increases from 0.88 mA to 0.99 mA as the relative humidity increases from 10 %RH to 70 %RH. KCI Citation Count: 4 |
| Author | Lee, Sung Pil |
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| Copyright | The Korean Institute of Metals and Materials and Springer 2010 |
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| References | RittersmaZ.Sensors and Actuator2002A 9619619610.1016/S0924-4247(01)00788-9 KimT. S.YangH. Y.ChoiS. S.JeongT. S.KangS. K.ShimK. H.Electron. Mater. Lett.20095434310.3365/eml.2009.03.0431:CAS:528:DC%2BD1MXks1Sks74%3D HastedJ.Aqueous Dielectrics1973LondonChapman and Hall3738 KimS. Y.LeeJ. G.ChangC. W.LeeS. P.J. of the Korean Sensors Soc.200716979710.5369/JSST.2007.16.2.097 MatsuguchiM.SadaokaY.SakaiY.KuroiwaT.ItoA.J. Electrochem. Soc.19911381862186210.1149/1.20858861:CAS:528:DyaK3MXksFWgsb8%3D SchubertD.NevinJ.IEEE Trans Electron Devices1985ED-321220122010.1109/T-ED.1985.221041:CAS:528:DyaL2MXkvV2gurk%3D LeeS. P.Electron. Mater. Lett.200951110.3365/eml.2009.03.0011:CAS:528:DC%2BD1MXks1Sksrw%3D MartinoiaS.MassobrioG.LorenzelliL.Sensors and Actuators2005B1081414 LeeS. P.LeeJ. G.ChowdhuryS.Sensors200882662266210.3390/s8042662 MeixnerH.JonesR.Sensors in Micro- and Nanotechnology, Sensors1995WeinheimVCH33 ShibataH.ItoM.AsakursaA.WatanabeK.IEEE Trans Instrum. Meas.19864556456410.1109/19.492788 MatsuguchiM.KuroiwaT.MiyagishiT.SuzukiS.OguraT.SakaiY.Sensors and Actuators1998B525353 LeeS. P.ParkK. J.Sensors and Actuators1996B35–368080 |
| References_xml | – reference: MeixnerH.JonesR.Sensors in Micro- and Nanotechnology, Sensors1995WeinheimVCH33 – reference: LeeS. P.ParkK. J.Sensors and Actuators1996B35–368080 – reference: KimS. Y.LeeJ. G.ChangC. W.LeeS. P.J. of the Korean Sensors Soc.200716979710.5369/JSST.2007.16.2.097 – reference: MartinoiaS.MassobrioG.LorenzelliL.Sensors and Actuators2005B1081414 – reference: MatsuguchiM.SadaokaY.SakaiY.KuroiwaT.ItoA.J. Electrochem. Soc.19911381862186210.1149/1.20858861:CAS:528:DyaK3MXksFWgsb8%3D – reference: KimT. S.YangH. Y.ChoiS. S.JeongT. S.KangS. K.ShimK. H.Electron. Mater. Lett.20095434310.3365/eml.2009.03.0431:CAS:528:DC%2BD1MXks1Sks74%3D – reference: HastedJ.Aqueous Dielectrics1973LondonChapman and Hall3738 – reference: SchubertD.NevinJ.IEEE Trans Electron Devices1985ED-321220122010.1109/T-ED.1985.221041:CAS:528:DyaL2MXkvV2gurk%3D – reference: LeeS. P.Electron. Mater. Lett.200951110.3365/eml.2009.03.0011:CAS:528:DC%2BD1MXks1Sksrw%3D – reference: RittersmaZ.Sensors and Actuator2002A 9619619610.1016/S0924-4247(01)00788-9 – reference: ShibataH.ItoM.AsakursaA.WatanabeK.IEEE Trans Instrum. Meas.19864556456410.1109/19.492788 – reference: MatsuguchiM.KuroiwaT.MiyagishiT.SuzukiS.OguraT.SakaiY.Sensors and Actuators1998B525353 – reference: LeeS. P.LeeJ. G.ChowdhuryS.Sensors200882662266210.3390/s8042662 |
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| Snippet | A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel... |
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| SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Condensed Matter Physics Materials Science Nanotechnology Nanotechnology and Microengineering Optical and Electronic Materials 전자/정보통신공학 |
| Title | Fabrication and sensing properties of a micro-humidity sensor system using CMOS technology |
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