郝跃, 郑. 范. 陈. 康. 张. 王. 默. 李. 马. 张. (2015). Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation. Chinese physics B, 24(2), 376-381. https://doi.org/10.1088/1674-1056/24/2/027302
Chicago Style (17th ed.) Citation郝跃, 郑雪峰 范爽 陈永和 康迪 张建坤 王冲 默江辉 李亮 马晓华 张进成. "Transport Mechanism of Reverse Surface Leakage Current in AlGaN/GaN High-electron Mobility Transistor with SiN Passivation." Chinese Physics B 24, no. 2 (2015): 376-381. https://doi.org/10.1088/1674-1056/24/2/027302.
MLA (9th ed.) Citation郝跃, 郑雪峰 范爽 陈永和 康迪 张建坤 王冲 默江辉 李亮 马晓华 张进成. "Transport Mechanism of Reverse Surface Leakage Current in AlGaN/GaN High-electron Mobility Transistor with SiN Passivation." Chinese Physics B, vol. 24, no. 2, 2015, pp. 376-381, https://doi.org/10.1088/1674-1056/24/2/027302.