Comparative research on ＂high currents＂ induced by single event latch-up and transient-induced latch-up - 陈睿 韩建伟 郑汉生 余永涛 上官士鹏 封国强 马英起 (Chinese physics B, 2015)
Keywords: CMOS; CMOS器件; Devices; Diffusion; High current; Latch-up; Metal oxide semiconductors; Minority carriers; NPN结构; Semiconductors; 事件; 少数载流子; 电离辐射诱导; 瞬态; 闭锁; 高电流