Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range - 武玫 郑大勇 王媛 陈伟伟 张凯 马晓华 张进成 郝跃 (Chinese physics B, 2014)
Keywords: AlGaN; Aluminum gallium nitrides; Barriers; Density; Gallium nitrides; HEMT器件; High electron mobility transistors; Mathematical models; Semiconductor devices; Thermionic emission; Transport; 传输机制; 温度范围; 热电子发射; 电流增益; 肖特基接触; 高电子迁移率晶体管