APA (7th ed.) Citation

Petukhov, M. A., & Ryazanov, A. I. (2019). Modeling the Behavior of a MOS Transistor under Fast Neutron and Gamma Irradiation. Physics of atomic nuclei, 82(11), 1466-1475. https://doi.org/10.1134/S1063778819120214

Chicago Style (17th ed.) Citation

Petukhov, M. A., and A. I. Ryazanov. "Modeling the Behavior of a MOS Transistor Under Fast Neutron and Gamma Irradiation." Physics of Atomic Nuclei 82, no. 11 (2019): 1466-1475. https://doi.org/10.1134/S1063778819120214.

MLA (9th ed.) Citation

Petukhov, M. A., and A. I. Ryazanov. "Modeling the Behavior of a MOS Transistor Under Fast Neutron and Gamma Irradiation." Physics of Atomic Nuclei, vol. 82, no. 11, 2019, pp. 1466-1475, https://doi.org/10.1134/S1063778819120214.