Turski, H., Muzioł, G., Siekacz, M., Wolny, P., Szkudlarek, K., Feduniewicz-Żmuda, A., . . . Skierbiszewski, C. (2018). Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE. Journal of crystal growth, 482, 56-60. https://doi.org/10.1016/j.jcrysgro.2017.11.001
Chicago Style (17th ed.) CitationTurski, Henryk, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Żmuda, Krzysztof Dybko, and Czeslaw Skierbiszewski. "Growth Rate Independence of Mg Doping in GaN Grown by Plasma-assisted MBE." Journal of Crystal Growth 482 (2018): 56-60. https://doi.org/10.1016/j.jcrysgro.2017.11.001.
MLA (9th ed.) CitationTurski, Henryk, et al. "Growth Rate Independence of Mg Doping in GaN Grown by Plasma-assisted MBE." Journal of Crystal Growth, vol. 482, 2018, pp. 56-60, https://doi.org/10.1016/j.jcrysgro.2017.11.001.