Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

• Published in: Chinese physics B Vol. 33; no. 1; pp. 17305 - 748
• Main Authors: Zhu, Guang-Yu, Ning, Ji-Ai, Wang, Jian-Kun, Liu, Xin-Jie, Yang, Jia-Jie, Lin, Ben-Chuan, Wang, Shuo
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.01.2024
• Subjects: quantum transport; spin field-effect transistor; spin-momentum locking; topological semimetal; quantum transport; spin-momentum locking; topological semimetal; spin field-effect transistor
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ace157

Spin–momentum locking is a key feature of the topological surface state, which plays an important role in spintronics. The electrical detection of current-induced spin polarization protected by the spin–momentum locking in nonmagnetic systems provides a new platform for developing spintronics, while previous studies were mostly based on magnetic materials. In this study, the spin transport measurement of Dirac semimetal Cd 3 As 2 was studied by three-terminal geometry, and a hysteresis loop signal with high resistance and low resistance state was observed. The hysteresis was reversed by reversing the current direction, which illustrates the spin–momentum locking feature of Cd 3 As 2 . Furthermore, we realized the on–off states of the spin signals through electric modulation of the Fermi arc via the three-terminal configuration, which enables the great potential of Cd 3 As 2 in spin field-effect transistors.