Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs - 张严波 杜彦东 熊莹 杨香 韩伟华 杨富华 (Journal of semiconductors, 2011)
Keywords: Channels; Conduction; Cross sections; Density; Gates; Majority carriers; P沟道; Semiconductors; SOI; Transport; 场效应晶体管; 场效应管; 积累模式; 门控; 驱动电流; 鳍