Modeling and characterization of shielded low loss CPWs on 65 nm node silicon
Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the freq...
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| Published in | Journal of semiconductors Vol. 32; no. 6; pp. 55 - 59 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.06.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/32/6/064009 |
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| Abstract | Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the frequency-dependent per-unit-length L,C,R and G parameters.Starting with a basic CPW structure,the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model.The accuracy of the model is confirmed by experimental results. |
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| AbstractList | Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the frequency-dependent per-unit-length L,C,R and G parameters.Starting with a basic CPW structure,the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model.The accuracy of the model is confirmed by experimental results. Coplanar waveguides (CPWs) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology. A physical-based model is proposed to describe the frequency-dependent per-unit-length L, C, R and G parameters. Starting with a basic CPW structure, the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model. The accuracy of the model is confirmed by experimental results. |
| Author | 王洪瑞 杨东旭 张莉 张雷 余志平 |
| AuthorAffiliation | Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Cites_doi | 10.1109/TMTT.2009.2015041 10.1109/TADVP.2007.898623 10.1016/0167-9260(84)90016-6 10.1109/TPHP.1974.1134841 10.1109/JSSC.2006.872737 10.1109/22.668675 10.1109/JSSC.2006.877258 10.1109/22.868993 |
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| DOI | 10.1088/1674-4926/32/6/064009 |
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| DocumentTitleAlternate | Modeling and characterization of shielded low loss CPWs on 65 nm node silicon |
| EndPage | 59 |
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| Notes | Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the frequency-dependent per-unit-length L,C,R and G parameters.Starting with a basic CPW structure,the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model.The accuracy of the model is confirmed by experimental results. Wang Hongrui,Yang Dongxu,Zhang Li,Zhang Lei , Yu Zhiping Institute of Microelectronics,Tsinghua University,Beijing 100084,China 11-5781/TN CMOS; CPW; shield; model ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | 1 2 Kim S (8) 1996; 3 4 5 6 9 Lai I C H (3) 2007 Meijs N V D (11) 1984; 2 Chen H (7) 2000 10 |
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| Snippet | Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines... Coplanar waveguides (CPWs) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines... |
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| SubjectTerms | CMOS CMOS技术 Coplanar waveguides Frequency bands Grounds Mathematical models Semiconductors Shields Silicon 屏蔽 建模 损耗 物理模型 纳米 节点 表征 |
| Title | Modeling and characterization of shielded low loss CPWs on 65 nm node silicon |
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