Post-oxidation effects on MgxZn1-xO/ZnO bi-layer metal-semiconductor-metal photodetectors
Post-oxidation was conducted for various times (0–8 min) in MgxZn1−xO/ZnO bi-layers and metal–semiconductor–metal photodetectors (MSM PDs) were fabricated. The effects of post-oxidation on the MgxZn1−xO/ZnO bi-layers and the optoelectronic characteristics of the MSM PDs were studied in detail. The l...
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| Published in | Journal of alloys and compounds Vol. 791; pp. 747 - 752 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Lausanne
Elsevier B.V
30.06.2019
Elsevier BV |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0925-8388 1873-4669 |
| DOI | 10.1016/j.jallcom.2019.03.420 |
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| Abstract | Post-oxidation was conducted for various times (0–8 min) in MgxZn1−xO/ZnO bi-layers and metal–semiconductor–metal photodetectors (MSM PDs) were fabricated. The effects of post-oxidation on the MgxZn1−xO/ZnO bi-layers and the optoelectronic characteristics of the MSM PDs were studied in detail. The leakage current of the MSM PDs decreased as post-oxidation time increased owing to the improvement of the crystal structure of the MgxZn1−xO/ZnO bi-layers. However, a long post-oxidation time (8 min) destroyed the crystal structure and raised the leakage current. After post-oxidation, the visible response of the MSM PDs was greatly reduced, therefore enhancing the ultraviolet (UV) (320 nm)/visible (500 nm) rejection ratio from 77 to 331 (approximately 4.3 times) for the MSM PDs with 5-min post-oxidation compared to the one without post-oxidation. X-ray photoelectron spectroscopy showed that, after post-oxidation, the introduced oxygen atoms compensated the oxygen-vacancy-related defects and that the thermal energy forced interstitial oxygen atoms (Oi) to fill in oxygen vacancies (OV). As a result, the number of lattice oxygen atoms (OL) increased, whereas the number of OV and Oi decreased. The improved crystal structure reduced the leakage current and enhanced the UV/visible rejection ratio. However, for a long post-oxidation time (8 min), the weakly-bonded oxygen atoms leaves the MgxZn1−xO surface, hence increasing the number of OV and decreasing that of OL. Increasing the number of defect degrades the performance of MSM PDs.
[Display omitted]
•Post-oxidation with various times (0–8 min) was employed in MgxZn1-xO/ZnO bi-layer.•Metal-semiconductor-metal photodetectors (MSM-PDs) were fabricated.•Leakage current of the MSM-PDs decreases with increasing in post-oxidation time.•Ultraviolet (320 nm)/visible (500 nm) rejection ratio enhances from 77 to 331 after post-oxidation.•After post-oxidation lattice, oxygen atoms increase, however oxygen vacancies and interstitial oxygen decrease. |
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| AbstractList | Post-oxidation was conducted for various times (0–8 min) in MgxZn1−xO/ZnO bi-layers and metal–semiconductor–metal photodetectors (MSM PDs) were fabricated. The effects of post-oxidation on the MgxZn1−xO/ZnO bi-layers and the optoelectronic characteristics of the MSM PDs were studied in detail. The leakage current of the MSM PDs decreased as post-oxidation time increased owing to the improvement of the crystal structure of the MgxZn1−xO/ZnO bi-layers. However, a long post-oxidation time (8 min) destroyed the crystal structure and raised the leakage current. After post-oxidation, the visible response of the MSM PDs was greatly reduced, therefore enhancing the ultraviolet (UV) (320 nm)/visible (500 nm) rejection ratio from 77 to 331 (approximately 4.3 times) for the MSM PDs with 5-min post-oxidation compared to the one without post-oxidation. X-ray photoelectron spectroscopy showed that, after post-oxidation, the introduced oxygen atoms compensated the oxygen-vacancy-related defects and that the thermal energy forced interstitial oxygen atoms (Oi) to fill in oxygen vacancies (OV). As a result, the number of lattice oxygen atoms (OL) increased, whereas the number of OV and Oi decreased. The improved crystal structure reduced the leakage current and enhanced the UV/visible rejection ratio. However, for a long post-oxidation time (8 min), the weakly-bonded oxygen atoms leaves the MgxZn1−xO surface, hence increasing the number of OV and decreasing that of OL. Increasing the number of defect degrades the performance of MSM PDs. Post-oxidation was conducted for various times (0–8 min) in MgxZn1−xO/ZnO bi-layers and metal–semiconductor–metal photodetectors (MSM PDs) were fabricated. The effects of post-oxidation on the MgxZn1−xO/ZnO bi-layers and the optoelectronic characteristics of the MSM PDs were studied in detail. The leakage current of the MSM PDs decreased as post-oxidation time increased owing to the improvement of the crystal structure of the MgxZn1−xO/ZnO bi-layers. However, a long post-oxidation time (8 min) destroyed the crystal structure and raised the leakage current. After post-oxidation, the visible response of the MSM PDs was greatly reduced, therefore enhancing the ultraviolet (UV) (320 nm)/visible (500 nm) rejection ratio from 77 to 331 (approximately 4.3 times) for the MSM PDs with 5-min post-oxidation compared to the one without post-oxidation. X-ray photoelectron spectroscopy showed that, after post-oxidation, the introduced oxygen atoms compensated the oxygen-vacancy-related defects and that the thermal energy forced interstitial oxygen atoms (Oi) to fill in oxygen vacancies (OV). As a result, the number of lattice oxygen atoms (OL) increased, whereas the number of OV and Oi decreased. The improved crystal structure reduced the leakage current and enhanced the UV/visible rejection ratio. However, for a long post-oxidation time (8 min), the weakly-bonded oxygen atoms leaves the MgxZn1−xO surface, hence increasing the number of OV and decreasing that of OL. Increasing the number of defect degrades the performance of MSM PDs. [Display omitted] •Post-oxidation with various times (0–8 min) was employed in MgxZn1-xO/ZnO bi-layer.•Metal-semiconductor-metal photodetectors (MSM-PDs) were fabricated.•Leakage current of the MSM-PDs decreases with increasing in post-oxidation time.•Ultraviolet (320 nm)/visible (500 nm) rejection ratio enhances from 77 to 331 after post-oxidation.•After post-oxidation lattice, oxygen atoms increase, however oxygen vacancies and interstitial oxygen decrease. |
| Author | Hwang, Jun-Dar Hwang, Sheng-Beng Huang, Wei-Lin |
| Author_xml | – sequence: 1 givenname: Jun-Dar orcidid: 0000-0001-6341-8859 surname: Hwang fullname: Hwang, Jun-Dar email: jundar@mail.ncyu.edu.tw organization: Department of Electrophysics, National Chiayi University, No. 300 Syuefu Rd., Chiayi 60004, Taiwan – sequence: 2 givenname: Wei-Lin surname: Huang fullname: Huang, Wei-Lin organization: Department of Electrophysics, National Chiayi University, No. 300 Syuefu Rd., Chiayi 60004, Taiwan – sequence: 3 givenname: Sheng-Beng surname: Hwang fullname: Hwang, Sheng-Beng organization: Department of Electrical Engineering, Chienkuo Technology University, Changhua 500, Taiwan |
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| Snippet | Post-oxidation was conducted for various times (0–8 min) in MgxZn1−xO/ZnO bi-layers and metal–semiconductor–metal photodetectors (MSM PDs) were fabricated. The... Post-oxidation was conducted for various times (0–8 min) in MgxZn1−xO/ZnO bi-layers and metal–semiconductor–metal photodetectors (MSM PDs) were fabricated. The... |
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| SubjectTerms | Atomic properties Bonding strength Chemical bonds Crystal defects Crystal structure Lattice vacancies Leakage current Metal–semiconductor–metal MgxZn1−xO/ZnO Optoelectronics Oxidation Oxidation effects Oxygen atoms Performance degradation Photodetectors Photoelectrons Photometers Rejection Thermal energy X-ray photoelectron spectroscopy Zinc oxide |
| Title | Post-oxidation effects on MgxZn1-xO/ZnO bi-layer metal-semiconductor-metal photodetectors |
| URI | https://dx.doi.org/10.1016/j.jallcom.2019.03.420 https://www.proquest.com/docview/2229636814 |
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