Single-Event Burnout Mechanisms in SiC Power MOSFETs - Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D. (IEEE transactions on nuclear science, 2018)
Keywords: Burnout; Current density; Device simulations; Heavy ions; High voltages; Impact ionization; MOSFET; MOSFETs; power devices; power MOSFETs; Semiconductor process modeling; Silicon carbide; silicon carbide (SiC); Simulation; single-event burnout (SEB); single-event effects; TCAD; Threshold voltage; Voltage