Single-Event Burnout Mechanisms in SiC Power MOSFETs
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold...
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| Published in | IEEE transactions on nuclear science Vol. 65; no. 8; pp. 1951 - 1955 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.08.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0018-9499 1558-1578 1558-1578 |
| DOI | 10.1109/TNS.2018.2849405 |
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| Abstract | Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. |
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| AbstractList | Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm2/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. |
| Author | Sternberg, Andrew L. Lauenstein, Jean-Marie Ball, Dennis R. Javanainen, Arto Witulski, Arthur F. Galloway, Kenneth F. Schrimpf, Ronald D. |
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| Cites_doi | 10.1109/23.556887 10.1109/JPROC.2002.1021562 10.1109/TNS.2016.2616921 10.1109/TNS.2006.884971 10.1109/TNS.2013.2252194 10.1063/1.1784520 10.1109/TNS.2016.2640945 10.1109/16.210211 10.1016/j.microrel.2015.06.081 10.1109/23.490900 10.1109/APEC.2015.7104691 10.1109/TNS.2014.2336911 10.1109/SISPAD.2005.201500 10.4028/www.scientific.net/MSF.556-557.851 |
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| Snippet | Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show... |
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| SubjectTerms | Burnout Current density Device simulations Heavy ions High voltages Impact ionization MOSFET MOSFETs power devices power MOSFETs Semiconductor process modeling Silicon carbide silicon carbide (SiC) Simulation single-event burnout (SEB) single-event effects TCAD Threshold voltage Voltage |
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| Title | Single-Event Burnout Mechanisms in SiC Power MOSFETs |
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